{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,4]],"date-time":"2026-03-04T17:30:07Z","timestamp":1772645407274,"version":"3.50.1"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10118286","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T17:50:57Z","timestamp":1684173057000},"page":"1-4","source":"Crossref","is-referenced-by-count":4,"title":["Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness"],"prefix":"10.1109","author":[{"given":"Om","family":"Prakash","sequence":"first","affiliation":[{"name":"Rochester Institute of Technology,USA"}]},{"given":"Kai","family":"Ni","sequence":"additional","affiliation":[{"name":"Rochester Institute of Technology,USA"}]},{"given":"Hussam","family":"Amrouch","sequence":"additional","affiliation":[{"name":"University of Stuttgart,Chair of Semiconductor Test and Reliability (STAR),Germany"}]}],"member":"263","reference":[{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129226"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2557358"},{"key":"ref3","year":"0","journal-title":"SentaurusTM Device User Guide Version P-2019 03"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720631"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371981"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2022.3148669"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-020-00492-7"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2023,3,26]]},"end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10118286.pdf?arnumber=10118286","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T17:49:45Z","timestamp":1686592185000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10118286\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10118286","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}