{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,17]],"date-time":"2025-05-17T04:01:51Z","timestamp":1747454511982,"version":"3.40.5"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10982743","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"1-8","source":"Crossref","is-referenced-by-count":0,"title":["Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices"],"prefix":"10.1109","author":[{"given":"J. P.","family":"Bastos","sequence":"first","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"J.","family":"Franco","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"B. J.","family":"O'Sullivan","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"Y.","family":"Higashi","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"A.","family":"Chasin","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"J.","family":"Ganguly","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"H.","family":"Arimura","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"A.","family":"Spessot","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"M.-S.","family":"Kim","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]},{"given":"N.","family":"Horiguchi","sequence":"additional","affiliation":[{"name":"imec,Leuven,Belgium"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/iedm.2015.7409775"},{"volume-title":"Samsung Develops Industry\u2019s First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications","key":"ref2"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/iedm19574.2021.9720583"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/imw.2018.8388823"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/tdmr.2020.2984957"},{"key":"ref6","article-title":"DRAM - Challenging history and future (short course)","volume-title":"presented at the IEDM","author":"Woo","year":"2018"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1149\/1.2124118"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1149\/1.2100881"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/t-ed.1987.23137"},{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1016\/j.apsusc.2019.03.227"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1109\/iedm.2014.7047093"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/iedm45625.2022.10019385"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1063\/1.56801"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1149\/1.2426565"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/irps.2014.6860624"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1016\/j.microrel.2018.04.002"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1002\/andp.19354160705"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1109\/led.2003.816579"},{"key":"ref19","article-title":"Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability-Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I\/O and Core Logic","volume-title":"Symp. VLSI Technol. Dig. Tech. Pap.","author":"Franco","year":"2021"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1504\/ijmatei.2017.085810"},{"doi-asserted-by":"publisher","key":"ref21","DOI":"10.1109\/tdmr.2020.2982660"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10982743.pdf?arnumber=10982743","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:30:18Z","timestamp":1747373418000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10982743\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10982743","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}