{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,8]],"date-time":"2026-07-08T16:12:04Z","timestamp":1783527124747,"version":"3.55.0"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10982816","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"1-4","source":"Crossref","is-referenced-by-count":5,"title":["A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array Transistor"],"prefix":"10.1109","author":[{"given":"Moonyoung","family":"Jeong","sequence":"first","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyungjun","family":"Noh","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sangho","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yootak","family":"Jun","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeonghoon","family":"Oh","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jemin","family":"Park","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jaihyuk","family":"Song","sequence":"additional","affiliation":[{"name":"Semiconductor R&#x0026;D Center, Samsung Electronics Co. Ltd.,Hwasung,S. Korea,18448"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185290"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45741.2023.10413704"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48228.2024.10529491"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM50854.2024.10873338"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnologyandCir46783.2024.10631471"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2385797"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.7567\/SSDM.1997.B-3-3"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10982816.pdf?arnumber=10982816","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:44:04Z","timestamp":1747374244000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10982816\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10982816","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}