{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T13:44:17Z","timestamp":1774964657315,"version":"3.50.1"},"reference-count":28,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10982856","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"01-07","source":"Crossref","is-referenced-by-count":2,"title":["RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature"],"prefix":"10.1109","author":[{"given":"M.","family":"Millesimo","sequence":"first","affiliation":[{"name":"&#x201C;Guglielmo Marconi&#x201D; University of Bologna Campus of Cesena,Advanced Research Center on Electronic System,Department of Electrical, Electronic, and Information Engineering,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Valentini","sequence":"additional","affiliation":[{"name":"&#x201C;Guglielmo Marconi&#x201D; University of Bologna Campus of Cesena,Advanced Research Center on Electronic System,Department of Electrical, Electronic, and Information Engineering,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.","family":"Fiegna","sequence":"additional","affiliation":[{"name":"&#x201C;Guglielmo Marconi&#x201D; University of Bologna Campus of Cesena,Advanced Research Center on Electronic System,Department of Electrical, Electronic, and Information Engineering,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Sangiorgi","sequence":"additional","affiliation":[{"name":"&#x201C;Guglielmo Marconi&#x201D; University of Bologna Campus of Cesena,Advanced Research Center on Electronic System,Department of Electrical, Electronic, and Information Engineering,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.N.","family":"Tallarico","sequence":"additional","affiliation":[{"name":"&#x201C;Guglielmo Marconi&#x201D; University of Bologna Campus of Cesena,Advanced Research Center on Electronic System,Department of Electrical, Electronic, and Information Engineering,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Borga","sequence":"additional","affiliation":[{"name":"imec - interuniversitair micro electronica centrum,Heverlee,Belgium"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"N.","family":"Posthuma","sequence":"additional","affiliation":[{"name":"imec - interuniversitair micro electronica centrum,Heverlee,Belgium"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Decoutere","sequence":"additional","affiliation":[{"name":"imec - interuniversitair micro electronica centrum,Heverlee,Belgium"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"Bakeroot","sequence":"additional","affiliation":[{"name":"imec and Ghent University,Centre for Microsystems Technology,Ghent,Belgium,9052"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","first-page":"6247","article-title":"Commercial Ga N-Based Power Electronic Systems: A Review","volume-title":"J. Electron. Mater","volume":"49","author":"Pushpakaran","year":"2020"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/5.0061555"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3332611"},{"key":"ref4","first-page":"723","article-title":"Multidimensional device architectures for efficient power electronics","volume-title":"Nat Electron","volume":"5","author":"Zhang","year":"2022"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/led.2008.2000921"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/tpel.2023.3266365"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2017.2769167"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2022.3231566"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/led.2024.3424563"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2018.2828702"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3263819"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/led.2018.2847669"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2016.2553721"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2021.3111144"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/led.2020.2980150"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3278614"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3304272"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/5.0156040"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2010.5703436"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2014.2368191"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/tnano.2010.2045006"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2014.7047086"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.02.023"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/tim.2016.2518880"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/16.121702"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2014.6860643"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2013.6724733"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/irps48228.2024.10529393"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10982856.pdf?arnumber=10982856","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:47:30Z","timestamp":1747374450000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10982856\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10982856","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}