{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,21]],"date-time":"2025-08-21T17:29:37Z","timestamp":1755797377323,"version":"3.44.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10982954","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T13:30:30Z","timestamp":1747315830000},"page":"1-6","source":"Crossref","is-referenced-by-count":0,"title":["Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs"],"prefix":"10.1109","author":[{"given":"A.G.","family":"Viey","sequence":"first","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"W.","family":"Vandendaele","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"P. Kouat\u00e9","family":"Wafo","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"X.","family":"Garros","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"L.","family":"Basset","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"F.","family":"Ponthenier","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"J.","family":"Lacord","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA, Leti,Grenoble,France,F-38000"}]},{"given":"R.","family":"Fillon","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Crolles,France,38920"}]},{"given":"X.","family":"Federspiel","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Crolles,France,38920"}]},{"given":"D.","family":"Roy","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Crolles,France,38920"}]},{"given":"S.","family":"Joblot","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Crolles,France,38920"}]},{"given":"D.","family":"Golanski","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Crolles,France,38920"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45625.2022.10019397"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/vlsit.2012.6242497"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2016.7838029"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/iedm13553.2020.9371954"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/icicdt.2017.7993513"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/iirw59383.2023.10477633"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/irps48203.2023.10117681"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.2006.251260"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/iedm13553.2020.9371938"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2011.5784542"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2014.6860670"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2022.114801"},{"key":"ref13","article-title":"Method and device for evaluating electric performances of an FDSOI transistor","volume-title":"US8525528B2","author":"Garros","year":"2013"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/soi.2009.5318747"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/sispad.2013.6650670"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2018.8353540"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1103\/physrevb.77.104108"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2018.8353540"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10982954.pdf?arnumber=10982954","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,18]],"date-time":"2025-08-18T19:37:28Z","timestamp":1755545848000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10982954\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10982954","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}