{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:40:09Z","timestamp":1747374009073,"version":"3.40.5"},"reference-count":17,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10982985","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"1-8","source":"Crossref","is-referenced-by-count":0,"title":["Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices"],"prefix":"10.1109","author":[{"given":"H.","family":"Zhou","sequence":"first","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"M.","family":"Hasanuzzaman","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"S. D.","family":"Suk","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"S.","family":"Emans","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"S.","family":"Siddiqui","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"R.","family":"Robison","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"R.","family":"Vega","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"M.","family":"Wang","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"Y.","family":"Sulehria","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"S.","family":"Mochizuki","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"C.","family":"Durfee","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"O.","family":"Gluschenkov","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"N.","family":"Fokas","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"G.","family":"Bajpai","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"E.","family":"Leobandung","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"R.","family":"Mo","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"R.","family":"Krishnan","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"K.","family":"Okada","sequence":"additional","affiliation":[{"name":"Rapidus US,Albany,NY,USA,12203"}]},{"given":"H.","family":"Miki","sequence":"additional","affiliation":[{"name":"Rapidus US,Albany,NY,USA,12203"}]},{"given":"L.","family":"Qin","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"C.","family":"Child","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"T.","family":"Standaert","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"K.","family":"Zhao","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"D.","family":"Sohn","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"Y.","family":"Fukuzaki","sequence":"additional","affiliation":[{"name":"Rapidus US,Albany,NY,USA,12203"}]},{"given":"K.","family":"Tomida","sequence":"additional","affiliation":[{"name":"Rapidus US,Albany,NY,USA,12203"}]},{"given":"D.","family":"Guo","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]},{"given":"H.","family":"Bu","sequence":"additional","affiliation":[{"name":"Semiconductor Technology R&D., IBM Semiconductors, IBM Research,Albany,NY,USA,12203"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2022.3190080"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720561"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998183"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48203.2023.10117953"},{"key":"ref5","article-title":"Tutorial","volume-title":"Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)","volume":"174","author":"Bravaix","year":"1999"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2009.05.013"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720475"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/tdmr.2019.2938319"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268381"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3106540"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764470"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128310"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112837"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720674"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405153"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1201\/b21267"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.3390\/electronics9081283"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10982985.pdf?arnumber=10982985","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:25:59Z","timestamp":1747373159000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10982985\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10982985","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}