{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T16:28:49Z","timestamp":1781281729200,"version":"3.54.1"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983084","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"3A.2-1-3A.2-6","source":"Crossref","is-referenced-by-count":2,"title":["Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited)"],"prefix":"10.1109","author":[{"given":"Kamal","family":"Varadarajan","sequence":"first","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alexei","family":"Ankoudinov","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Robert","family":"Yang","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alexey","family":"Kudymov","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bhawani","family":"Shankar","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Karthick","family":"Murukesan","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sorin","family":"Georgescu","sequence":"additional","affiliation":[{"name":"Power Integrations,San Jose,CA,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-43199-4"},{"key":"ref2","article-title":"GaN Application Base Widens, Adoption Grows","volume-title":"Semiconductor Engineering","author":"Waurzyniak","year":"2021"},{"key":"ref3","volume-title":"Transphorm: 900 V GaN FETs;c2024"},{"key":"ref4","article-title":"Power Integrations launches 900 V GaN flyback switcher ICs","volume-title":"Power Electronics News","author":"Di Paolo Emilio","year":"2023"},{"key":"ref5","volume-title":"GaNPower International Discrete GanFET 900V Series"},{"key":"ref6","article-title":"Silicon carbide\u2019s wafer cost conundrum and the way forward","volume-title":"EDN Asia","author":"Ahmad","year":"2023"},{"key":"ref7","article-title":"Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC","volume-title":"Analog Design Journal. Texas Instruments.","author":"Beheshti","year":"2022"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45625.2022.10019381"},{"key":"ref9","volume-title":"1200V Enhancement-mode GaN Power Devices challenge SiC"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3225695"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45741.2023.10413753"},{"key":"ref12","article-title":"SurgeRobust Flyback Power Supplies with GaN","volume-title":"Proc. IEEE APEC","author":"Varadarajan"},{"key":"ref13","article-title":"Reaching Beyond 1200V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications","volume-title":"Proc. PCIM 2024","author":"Varadarajan"},{"key":"ref14","year":"2023","journal-title":"JEP 198 JEDEC Standard, Guideline for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices"},{"key":"ref15","article-title":"Reliability Testing of AlGaN\/GaN Power Switch Devices at Low and High Temperature","volume-title":"ROCS Workshop","author":"Smith"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2446032"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.917815"},{"key":"ref18","article-title":"High Humidity, High Temperature and High Voltage Reverse Bias \u2013 A relevant test for industrial applications","author":"Jormanainen","year":"2018","journal-title":"Proc. PCIM"},{"key":"ref19","journal-title":"Guideline for Switching Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices"},{"key":"ref20","article-title":"Power Integrations Releases Innovative 1,250 V GaN Switcher IC","volume-title":"Power ElectronicsNews","author":"Di Paolo Emilio","year":"2023"},{"key":"ref21","volume-title":"Power Integrations Applications Engineering Department Reference Design Report for a 60 W Isolated Flyback Power Supply Using InnoSwitch3AQ INN3949CQ. High Input Voltage for Automotive Application","year":"2023"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983084.pdf?arnumber=10983084","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:37:12Z","timestamp":1747373832000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983084\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983084","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}