{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T06:10:11Z","timestamp":1747375811103,"version":"3.40.5"},"reference-count":25,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983138","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"01-06","source":"Crossref","is-referenced-by-count":0,"title":["HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack"],"prefix":"10.1109","author":[{"given":"A.N.","family":"Tallarico","sequence":"first","affiliation":[{"name":"University of Bologna Campus of Cesena,Electronic, and Information Engineering &#x201C;Guglielmo Marconi&#x201D;,Advanced Research Center on Electronic System - Department of Electrical,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Millesimo","sequence":"additional","affiliation":[{"name":"University of Bologna Campus of Cesena,Electronic, and Information Engineering &#x201C;Guglielmo Marconi&#x201D;,Advanced Research Center on Electronic System - Department of Electrical,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"U.","family":"Ibrar","sequence":"additional","affiliation":[{"name":"University of Bologna Campus of Cesena,Electronic, and Information Engineering &#x201C;Guglielmo Marconi&#x201D;,Advanced Research Center on Electronic System - Department of Electrical,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Sangiorgi","sequence":"additional","affiliation":[{"name":"University of Bologna Campus of Cesena,Electronic, and Information Engineering &#x201C;Guglielmo Marconi&#x201D;,Advanced Research Center on Electronic System - Department of Electrical,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.","family":"Fiegna","sequence":"additional","affiliation":[{"name":"University of Bologna Campus of Cesena,Electronic, and Information Engineering &#x201C;Guglielmo Marconi&#x201D;,Advanced Research Center on Electronic System - Department of Electrical,Cesena,Italy"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T.\u2013Y.","family":"Yang","sequence":"additional","affiliation":[{"name":"International College of Semiconductor Technology National Yang Ming Chiao Tung University (NYCU),Hsinchu 300,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.\u2013S","family":"Wu","sequence":"additional","affiliation":[{"name":"International College of Semiconductor Technology National Yang Ming Chiao Tung University (NYCU),Hsinchu 300,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.","family":"Iwai","sequence":"additional","affiliation":[{"name":"International College of Semiconductor Technology National Yang Ming Chiao Tung University (NYCU),Hsinchu 300,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.\u2013Y.","family":"Chang","sequence":"additional","affiliation":[{"name":"International College of Semiconductor Technology National Yang Ming Chiao Tung University (NYCU),Hsinchu 300,Taiwan"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0061555"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/tpel.2023.3266365"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/jestpe.2016.2582685"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/led.2018.2825645"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201900717"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/led.2021.3098726"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/5.0241351"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/jeds.2022.3188463"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/5.0211768"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3295766"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2023.115215"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/laedc54796.2022.9907769"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"1096","DOI":"10.1007\/s11664-024-11600-0","article-title":"Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN\/GaN MIS-HEMTs Using ZrO2 Seed Layers","volume":"54","author":"Yu","year":"2025","journal-title":"J. Electron. Mater"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/icse62991.2024.10681347"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45625.2022.10019471"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.3390\/mi15010101"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2024.3393933"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.202300018"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/5.0076925"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/led.2020.2965330"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/irps48227.2022.9764592"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/led.2022.3206610"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2019.2938598"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2021.3111144"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/led.2024.3424563"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983138.pdf?arnumber=10983138","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:39:03Z","timestamp":1747373943000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983138\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":25,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983138","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}