{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,10]],"date-time":"2026-04-10T16:36:07Z","timestamp":1775838967794,"version":"3.50.1"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983202","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"P49.PK-1-P49.PK-4","source":"Crossref","is-referenced-by-count":1,"title":["Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact Resistance"],"prefix":"10.1109","author":[{"given":"Sanghyeon","family":"Jeon","sequence":"first","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ilgeun","family":"Jung","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seungjin","family":"Kim","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sangki","family":"Kim","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yangkeun","family":"Park","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Seungbum","family":"Kim","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Boyoung","family":"Song","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hyodong","family":"Ban","sequence":"additional","affiliation":[{"name":"DRAM Yield Enhancement, Samsung Electronics, Co., Ltd.,Hwa-seong si,Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2021.3117071"},{"key":"ref2","first-page":"2","article-title":"System scaling and collaborative open innovation","volume-title":"Symp. VLSI Technol. Dig. Tech. Papers","author":"Sun","year":"2013"},{"key":"ref3","first-page":"130","article-title":"8 Gb 3D DDR3 DRAM using through-silicon-via technology","author":"Kang","year":"2009","journal-title":"IEEE ISSCC Dig. Tech. Papers"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242474"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2360379"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/HOTCHIPS.2011.7477494"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2016.7564237"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983202.pdf?arnumber=10983202","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:15:00Z","timestamp":1747372500000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983202\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983202","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}