{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,24]],"date-time":"2026-06-24T20:32:02Z","timestamp":1782333122919,"version":"3.54.5"},"reference-count":71,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983206","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"1-10","source":"Crossref","is-referenced-by-count":3,"title":["A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO<sub>2<\/sub> and its Comparison with 2D Gate Dielectrics"],"prefix":"10.1109","author":[{"given":"Ernest Y.","family":"Wu","sequence":"first","affiliation":[{"name":"Essex Junction,IBM Research Division,Vermont"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Richard G.","family":"Southwick","sequence":"additional","affiliation":[{"name":"Albany,New York"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Baozhen","family":"Li","sequence":"additional","affiliation":[{"name":"Essex Junction,IBM Infrastructure,Vermont,USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2007.01.030"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/irps.1981.362997"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.2006.251294"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2009.2021721"},{"key":"ref5","first-page":"1","article-title":"Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB","volume-title":"Proc. IRPS","author":"Kim","year":"2019"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-024-01286-x"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1038\/s41563-024-02043-3"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-023-40123-1"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00683-w"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-019-0334-y"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-023-37887-x"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202002525"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/led.2019.2923420"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201700506"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.1710258"},{"issue":"230","key":"ref16","article-title":"Theory of electrical breakdown in ionic crystals","volume-title":"Proc. Roy. Soc.","volume":"160","author":"Frohlich","year":"1937"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1103\/physrevb.24.3519"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.111350"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1103\/physrevb.49.10278"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/mei.2013.6457595"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.352936"},{"issue":"083501","key":"ref22","article-title":"Extended Mie-Gruneisen molecular model for time-dependent dielectric breakdown in Silica detailing the critical roles of O-Si-O tetragonal bonding,stretched bonds, hole capture, and hydrogen release","volume":"99","author":"McPherson","year":"2006","journal-title":"J. Appl. Phys"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2003.815141"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.4962320"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2009.5173306"},{"key":"ref26","first-page":"5A.2\u20131","article-title":"Role of electron and hole trapping in the degradation and breakdown of $\\text{SiO}_{2}$ and Hf02 films","volume-title":"Proc. IRPS. IRPS","author":"Gao","year":"2018"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/physrevmaterials.2.035002"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.324659"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1039\/tf9484400238"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1063\/1.116678"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/0167-9317(95)00065-g"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/16.842960"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1063\/1.365812"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1016\/S0921-4526(99)00333-6"},{"key":"ref35","first-page":"7","article-title":"Experimental evindence for votlage driven breakdown models in ultra-thin gate oxides","volume-title":"Proc. IRPS","author":"Nicollian","year":"2000"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.2000.843885"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.2002.996611"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/led.2002.801293"},{"key":"ref39","doi-asserted-by":"crossref","first-page":"4523","DOI":"10.1109\/TED.2019.2933612","article-title":"Facts and myths of dielectric breakdown processes - Part I: Statistics, Experimental, and Physical Acceleration Models","volume":"66","author":"Ernest","year":"2019","journal-title":"IEEE Tran. Elec. Dev."},{"key":"ref40","first-page":"167","article-title":"Reliability Projections for Ultra-Thin Oxides at Low Voltage","author":"Stathis","year":"1998","journal-title":"IEDM Tech. Dig."},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.04.004"},{"issue":"224","key":"ref42","article-title":"Experimental evidence of TBD power-law for voltage dependence of oxide breakdown in ultrathin gate oxides","volume":"49","author":"Wu","year":"2002","journal-title":"Tran. Elec. Dev."},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2002.805612"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2002.805603"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/16.887012"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1063\/1.4824035"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/irps48228.2024.10529405"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2009.2021725"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1147\/rd.433.0327"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1063\/1.117072"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.1997.584258"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/irws.2005.1609560"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.1995.499353"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1063\/1.371590"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/55.924847"},{"key":"ref56","article-title":"Current Understanding and Future Challenges of Gate Dielectric Breakdown Reliability","author":"Wu","year":"2024","journal-title":"IEDM tutorial"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1063\/1.4811460"},{"key":"ref58","author":"Lanza","journal-title":"Private Communications"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/ab918b"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2015.7112669"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1103\/physrev.163.816"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1103\/revmodphys.54.437"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1063\/1.123060"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1063\/1.365364"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/16.930653"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1063\/1.1427398"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/tdmr.2004.836727"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/16.141240"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1063\/1.3374883"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1063\/1.3583655"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2008.4796605"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983206.pdf?arnumber=10983206","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:14:53Z","timestamp":1747372493000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983206\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":71,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983206","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}