{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:40:08Z","timestamp":1747374008415,"version":"3.40.5"},"reference-count":4,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983281","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"P54.PI-1-P54.PI-4","source":"Crossref","is-referenced-by-count":0,"title":["Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approach"],"prefix":"10.1109","author":[{"given":"O. H.","family":"Gonzalez","sequence":"first","affiliation":[{"name":"Globalfoundries US Inc,Malta,NY,USA,12020"}]},{"given":"P.","family":"Srinivasan","sequence":"additional","affiliation":[{"name":"Globalfoundries US Inc,Malta,NY,USA,12020"}]},{"given":"S.","family":"Cimino","sequence":"additional","affiliation":[{"name":"Globalfoundries US Inc,Malta,NY,USA,12020"}]},{"given":"K.","family":"Shanbhag","sequence":"additional","affiliation":[{"name":"Globalfoundries US Inc,Malta,NY,USA,12020"}]},{"given":"S.","family":"Jain","sequence":"additional","affiliation":[{"name":"Globalfoundries US Inc,Malta,NY,USA,12020"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405202"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.23919\/EuMIC61603.2024.10732257"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764575"},{"key":"ref4","article-title":"Effect of OFF-State Stress on CMOS Devices, Xavier Federspiel; STMicroelectronics","author":"Federspiel","year":"2024","journal-title":"IRPS tutorial"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983281.pdf?arnumber=10983281","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:29:14Z","timestamp":1747373354000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983281\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":4,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983281","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}