{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,23]],"date-time":"2025-12-23T12:26:08Z","timestamp":1766492768981,"version":"3.40.5"},"reference-count":52,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100010663","name":"European Research Council (ERC) Synergy QuCube","doi-asserted-by":"publisher","award":["810504-QUCUBE-ERC-2018-SyG"],"award-info":[{"award-number":["810504-QUCUBE-ERC-2018-SyG"]}],"id":[{"id":"10.13039\/100010663","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983307","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"01-07","source":"Crossref","is-referenced-by-count":2,"title":["Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited)"],"prefix":"10.1109","author":[{"given":"Mika\u00ebl","family":"Cass\u00e9","sequence":"first","affiliation":[{"name":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fl\u00e1vio Enrico","family":"Bergamaschi","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Quentin","family":"Berlingard","sequence":"additional","affiliation":[{"name":"Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.3.024010"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838410"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45625.2022.10019322"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/vlsitechnology18217.2020.9265034"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.5772\/intechopen.98403"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/CICTA.2018.8706117"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2919924"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1115\/1.2830059"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.877874"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.1741039"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.4710993"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2024.3367316"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48228.2024.10529429"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48228.2024.10529431"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LAEDC54796.2022.9908242"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2021.3116975"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3139563"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/16.974706"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2259174"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/16.902734"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2943744"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1007\/s12274-010-1019-z"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4832615"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2911085"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242497"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ICMTS.1990.67907"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/16.259622"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2024.3384450"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724581"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.56439\/WJP\/2023.1110"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2022.108265"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3297564"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.1995.526487"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2016.2568261"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2155658"},{"key":"ref36","first-page":"T248","article-title":"Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices","volume-title":"Symposium on VLSI Technology, Digest of Technical Papers","author":"Lee","year":"2013"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/16.544417"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.23919\/EuMIC58042.2023.10289100"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45741.2023.10413783"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1964.3183"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2205659"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.2999632"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.3002201"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3071272"},{"volume-title":"Advanced DC and RF electrical characterisation of passive and active components in 28nm-FDSOI technology at cryogenic temperature","year":"2024","author":"Berlingard","key":"ref45"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/16.915707"},{"key":"ref47","first-page":"305","article-title":"Experimental assessment of self-heating in SOl FinFETs","author":"Scholten","year":"2009","journal-title":"IEDM Technical Digest"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2925266"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/irps48227.2022.9764571"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128316"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128349"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/EDTM55494.2023.10102937"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2025,3,30]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983307.pdf?arnumber=10983307","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:14:59Z","timestamp":1747372499000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983307\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":52,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983307","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}