{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T17:01:57Z","timestamp":1781283717152,"version":"3.54.1"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,3,30]],"date-time":"2025-03-30T00:00:00Z","timestamp":1743292800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2025,3,30]]},"DOI":"10.1109\/irps48204.2025.10983571","type":"proceedings-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T17:30:30Z","timestamp":1747330230000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Dynamic Reverse Bias Reliability Testing of SiC MOSFETs"],"prefix":"10.1109","author":[{"given":"Vamsi","family":"Mulpuri","sequence":"first","affiliation":[{"name":"3520 Challenger Street,Torrance,CA,USA,90503"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vishank","family":"Talesara","sequence":"additional","affiliation":[{"name":"3520 Challenger Street,Torrance,CA,USA,90503"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kailun","family":"Zhong","sequence":"additional","affiliation":[{"name":"3520 Challenger Street,Torrance,CA,USA,90503"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siddarth","family":"Sundaresan","sequence":"additional","affiliation":[{"name":"3520 Challenger Street,Torrance,CA,USA,90503"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Navitas","family":"Semiconductor","sequence":"additional","affiliation":[{"name":"3520 Challenger Street,Torrance,CA,USA,90503"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2024.3383424"},{"key":"ref2","article-title":"ECEP","year":"2021","journal-title":"ECPE guideline AQG 324 qualification of power modules for use in power electronics converter units in motor vehicles"},{"key":"ref3","article-title":"JEDEC JEP190","journal-title":"Guideline for Evaluating dv\/dt Robustness of SiC Power Devices"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ipemc-ecceasia60879.2024.10567430"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.35848\/1347-4065\/abff38"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1049\/iet-pel.2018.5897"}],"event":{"name":"2025 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2025,3,30]]},"end":{"date-parts":[[2025,4,3]]}},"container-title":["2025 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/10982526\/10982704\/10983571.pdf?arnumber=10983571","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:26:54Z","timestamp":1747373214000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10983571\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,3,30]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/irps48204.2025.10983571","relation":{},"subject":[],"published":{"date-parts":[[2025,3,30]]}}}