{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,6]],"date-time":"2025-11-06T18:57:40Z","timestamp":1762455460703,"version":"build-2065373602"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764420","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T16:44:23Z","timestamp":1651509863000},"page":"3A.1-1-3A.1-5","source":"Crossref","is-referenced-by-count":8,"title":["The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics"],"prefix":"10.1109","author":[{"given":"Y. K.","family":"Chang","sequence":"first","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"P. J.","family":"Liao","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"S. H.","family":"Yeong","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"Y.-M.","family":"Lin","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"J. H.","family":"Lee","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"C. T.","family":"Lin","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Advanced Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"Z.","family":"Yu","sequence":"additional","affiliation":[{"name":"Stanford University,Stanford California,USA"}]},{"given":"W.","family":"Tsai","sequence":"additional","affiliation":[{"name":"Stanford University,Stanford California,USA"}]},{"given":"P. C.","family":"McIntyre","sequence":"additional","affiliation":[{"name":"Stanford University,Stanford California,USA"}]}],"member":"263","reference":[{"key":"ref4","first-page":"1","article-title":"Characterization of Fatigue and Its Recovery Behavior in Ferroelectric HfZrO","author":"liao","year":"0","journal-title":"2021 Symposium on VLSI Technology"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614540"},{"key":"ref6","first-page":"733","article-title":"Negative U traps in HfO2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs","author":"shen","year":"0","journal-title":"2004 IEEE International Electron Devices Meeting (IEDM 2004)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202000264"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936289"},{"key":"ref2","first-page":"1","article-title":"105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications","author":"gong","year":"0","journal-title":"2021 Symposium on VLSI Technology"},{"key":"ref1","first-page":"my-3-1","article-title":"Root cause of degradation in novel HfO2-based ferroelectric memories","author":"pesic","year":"0","journal-title":"2016 IEEE International Reliability Physics Symposium (IRPS)"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764420.pdf?arnumber=9764420","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,11,6]],"date-time":"2025-11-06T18:51:07Z","timestamp":1762455067000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764420\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764420","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}