{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,1]],"date-time":"2025-07-01T06:25:04Z","timestamp":1751351104370,"version":"3.37.3"},"reference-count":15,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100006190","name":"Research and Development","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100006190","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100006190","name":"Research and Development","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100006190","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764436","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"3A.3-1-3A.3-6","source":"Crossref","is-referenced-by-count":2,"title":["GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films"],"prefix":"10.1109","author":[{"given":"Yiming","family":"Qu","sequence":"first","affiliation":[{"name":"Zhejiang University,College of Information Science &#x0026; Electronic Engineering,Hangzhou,China"}]},{"given":"Yang","family":"Shen","sequence":"additional","affiliation":[{"name":"Zhejiang University,College of Information Science &#x0026; Electronic Engineering,Hangzhou,China"}]},{"given":"Mingji","family":"Su","sequence":"additional","affiliation":[{"name":"Zhejiang University,College of Information Science &#x0026; Electronic Engineering,Hangzhou,China"}]},{"given":"Jiwu","family":"Lu","sequence":"additional","affiliation":[{"name":"Hunan University,College of Electrical and Information Engineering,Changsha,China"}]},{"given":"Yi","family":"Zhao","sequence":"additional","affiliation":[{"name":"Zhejiang University,College of Information Science &#x0026; Electronic Engineering,Hangzhou,China"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/TED.2016.2598855"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1016\/j.microrel.2018.03.022"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/LED.2017.2781243"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/IEDM.2017.8268520"},{"key":"ref14","first-page":"10","article-title":"Basics of measuring the dielectric properties of materials","year":"0","journal-title":"Keysight Technologies"},{"key":"ref15","first-page":"2.01","article-title":"Impedance measurement handbook","year":"0","journal-title":"Keysight Technologies"},{"key":"ref4","first-page":"314","article-title":"Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2","author":"kobayashi","year":"2016","journal-title":"Proc Int Electron Devices Meeting (IEDM)"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.23919\/VLSIT.2019.8776548"},{"key":"ref6","article-title":"Theory of dielectrics. dielectric constants and dielectric loss","author":"frohlich","year":"1990","journal-title":"Oxford"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/16.870559"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/LED.2018.2861729"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1143\/JJAP.22.L661"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/IEDM.2017.8268393"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.23919\/VLSIT.2017.7998160"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/IEDM.2016.7838519"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764436.pdf?arnumber=9764436","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,13]],"date-time":"2022-06-13T21:13:57Z","timestamp":1655154837000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764436\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764436","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}