{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T08:45:28Z","timestamp":1725698728079},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764461","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T16:44:23Z","timestamp":1651509863000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage Application"],"prefix":"10.1109","author":[{"given":"Yinghong","family":"Zhao","sequence":"first","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Ki-Don","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Manisha","family":"Sharma","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Joonah","family":"Yoon","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Rakesh","family":"Ranjan","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Iqbal","family":"Mahmud","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Caleb Dongkyan","family":"Kwon","sequence":"additional","affiliation":[{"name":"Samsung Austin Semiconductor, LLC,Austin,TX,USA,78754"}]},{"given":"Myung","family":"Soo Yeo","sequence":"additional","affiliation":[{"name":"Samsung Electronics,Samsung Foundry Business,Korea"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860613"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405089"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1155\/2014\/578168"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129094"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488773"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703480"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574599"},{"key":"ref1","first-page":"bd.5.1","article-title":"Polarity Dependence on Electrical Properties of Low-k Dielectric in Copper Interconnect Structures","author":"lin","year":"2012","journal-title":"2012 IEEE International Reliability Physics Symposium (IRPS)"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764461.pdf?arnumber=9764461","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T16:41:54Z","timestamp":1655224914000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764461\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764461","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}