{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,21]],"date-time":"2025-08-21T17:26:37Z","timestamp":1755797197262,"version":"3.28.0"},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764482","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T16:44:23Z","timestamp":1651509863000},"page":"10B.3-1-10B.3-6","source":"Crossref","is-referenced-by-count":7,"title":["Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor R<sub>ON<\/sub>\/V<sub>TH<\/sub> drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage"],"prefix":"10.1109","author":[{"given":"C.","family":"Leurquin","sequence":"first","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"W.","family":"Vandendaele","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.G","family":"Viey","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Gwoziecki","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Escoffier","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Salot","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Despesse","sequence":"additional","affiliation":[{"name":"Universit&#x00E9; Grenoble Alpes, CEA, LETI,Silicon Component Department (DCOS),Grenoble,France,F-38054"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Iucolano","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Catania,Italy,95121"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Modica","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Catania,Italy,95121"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Constant","sequence":"additional","affiliation":[{"name":"STMicroelectronics,Research and Development Department,Tours,France,37100"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.55.01AD04"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371938"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2017.8066609"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2015.7123383"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2881325"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.89.035204"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"2826","DOI":"10.1109\/TED.2017.2706090","article-title":"Leaky Dielectric&#x201D; Model for the Suppression of Dynamic RON in Carbon-Doped AlGaN\/GaN HEMTs","volume":"64","author":"uren","year":"2017","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3045683"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2842100"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2216535"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"707","DOI":"10.1109\/JESTPE.2016.2582685","article-title":"Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges","volume":"4","author":"jones","year":"2016","journal-title":"IEEE Journal of Emerging and Selected Topics in Power Electronics"},{"article-title":"Novel AlInN\/GaN integrated circuits operating up to 500&#x00C2;&#x00B0;C | Elsevier Enhanced Reader","year":"2015","author":"gaska","key":"ref3"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2013.6694432"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2011.6142584"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2017.10.029"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993588"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2015.7123384"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393658"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2015.7369305"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764482.pdf?arnumber=9764482","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T16:41:41Z","timestamp":1655224901000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764482\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764482","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}