{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,1]],"date-time":"2026-06-01T23:21:47Z","timestamp":1780356107338,"version":"3.54.1"},"reference-count":10,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764489","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"4A.3-1-4A.3-5","source":"Crossref","is-referenced-by-count":9,"title":["Investigation of First Fire Effect on V<sub>TH<\/sub> Stability and Endurance in GeCTe Selector"],"prefix":"10.1109","author":[{"given":"P. C.","family":"Chang","sequence":"first","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"P. J.","family":"Liao","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"D. W.","family":"Heh","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.","family":"Lee","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"D. H.","family":"Hou","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"E.","family":"Ambrosi","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C. H.","family":"Wu","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"H. Y.","family":"Lee","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J. H.","family":"Lee","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"X. Y.","family":"Bao","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Company, Ltd.,Hsinchu,Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405114"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.5126913"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265011"},{"key":"ref6","article-title":"Low-voltage (~1.3V), Arsenic Free Threshold Type Selector with Ultra High Endurance (> 1011) for High Density 1S1R Memory Array","author":"wu","year":"2021","journal-title":"Symposium on VLSI Technology"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405195"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419107"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720628"},{"key":"ref2","article-title":"Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors","author":"chai","year":"2019","journal-title":"Symposium on VLSI Technology"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838371"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993448"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2022,3,27]]},"end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764489.pdf?arnumber=9764489","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,13]],"date-time":"2022-06-13T21:14:17Z","timestamp":1655154857000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764489\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764489","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}