{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,14]],"date-time":"2025-12-14T08:30:04Z","timestamp":1765701004103},"reference-count":22,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764492","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"source":"Crossref","is-referenced-by-count":7,"title":["Short-Circuit Capability with GaN HEMTs : Invited"],"prefix":"10.1109","author":[{"given":"Davide","family":"Bisi","sequence":"first","affiliation":[{"name":"Transphorm, Inc.,Goleta,CA,USA,93117"}]},{"given":"Bill","family":"Cruse","sequence":"additional","affiliation":[{"name":"Transphorm, Inc.,Goleta,CA,USA,93117"}]},{"given":"Philip","family":"Zuk","sequence":"additional","affiliation":[{"name":"Transphorm, Inc.,Goleta,CA,USA,93117"}]},{"given":"Primit","family":"Parikh","sequence":"additional","affiliation":[{"name":"Transphorm, Inc.,Goleta,CA,USA,93117"}]},{"given":"Umesh","family":"Mishra","sequence":"additional","affiliation":[{"name":"Transphorm, Inc.,Goleta,CA,USA,93117"}]},{"given":"Tsutomu","family":"Hosoda","sequence":"additional","affiliation":[{"name":"Transphorm Japan Inc.,Yokohama,Japan"}]},{"given":"Masamichi","family":"Kamiyama","sequence":"additional","affiliation":[{"name":"Transphorm Japan Inc.,Yokohama,Japan"}]},{"given":"Masahito","family":"Kanamura","sequence":"additional","affiliation":[{"name":"Transphorm Japan Inc.,Yokohama,Japan"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2017.2719599"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA46397.2019.8998919"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.07.071"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.06.046"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2021.3077128"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2021.3090341"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD46842.2020.9170148"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA46397.2019.8998869"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2021.3052611"},{"key":"ref19","article-title":"SEMCONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITER","author":"wu","year":"2016","journal-title":"U S Patent"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2563220"},{"key":"ref3","article-title":"Si8285\/86 Data Sheet","year":"2021"},{"key":"ref6","article-title":"Short-circuit capability: benchmarking SiC and GaN devices with Si-based technologies","author":"yu","year":"2015","journal-title":"Proceedings of PCIM Europe 2015"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.55.04EG01"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614480"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA46397.2019.8998803"},{"key":"ref2","article-title":"Understanding the Short Circuit Protection for Silicon (SLUA863B)","author":"instruments","year":"2020"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/28.370271"},{"key":"ref9","article-title":"Short Circuit Capability of 650 V Normally Off GaN E-HEMT and MOSFET-HEMT Cascode","author":"pappis","year":"2017","journal-title":"PCIM Europe"},{"key":"ref20","article-title":"SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS","author":"mishra","year":"2015","journal-title":"U S Patent"},{"key":"ref22","article-title":"GaN Technology","year":"0"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/APEC42165.2021.9486987"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2022,3,27]]},"end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764492.pdf?arnumber=9764492","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T20:41:39Z","timestamp":1655239299000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764492\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764492","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}