{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,23]],"date-time":"2025-12-23T10:03:47Z","timestamp":1766484227245,"version":"3.28.0"},"reference-count":10,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764510","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"11B.4-1-11B.4-6","source":"Crossref","is-referenced-by-count":3,"title":["GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse"],"prefix":"10.1109","author":[{"given":"F.","family":"Chiocchetta","sequence":"first","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.","family":"De Santi","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Rampazzo","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K.","family":"Mukherjee","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jan","family":"Grunenputt","sequence":"additional","affiliation":[{"name":"UMS - United Monolithic Semiconductors"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Daniel","family":"Sommer","sequence":"additional","affiliation":[{"name":"UMS - United Monolithic Semiconductors"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Herve","family":"Blanck","sequence":"additional","affiliation":[{"name":"UMS - United Monolithic Semiconductors"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benoit","family":"Lambert","sequence":"additional","affiliation":[{"name":"UMS - United Monolithic Semiconductors"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Gerosa","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Meneghesso","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Zanoni","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Meneghini","sequence":"additional","affiliation":[{"name":"University of Padova,Department of Information Engineering,Padova,Italy,35131"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"28","article-title":"Trapping phenomena in AlGaN\/GaN HEMTs: a study based on pulsed and transient measurements","author":"gaudenzio","year":"0"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.06.057"},{"key":"ref10","first-page":"19","article-title":"Direct observation of 0.57eV trap-related RF output power reduction in AlGaN\/GaN high electron mobility transistors","volume":"80","author":"aaron","year":"0","journal-title":"Solid State Electronics"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353581"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.23919\/EOS\/ESD52038.2021.9574733"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2279021"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"445","DOI":"10.3390\/mi12040445","article-title":"Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n?n Diodes: The Road to Reliable Vertical MOSFETs","volume":"12","author":"mukherjee","year":"2021","journal-title":"Micromachines"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IMFEDK.2014.6867065"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.832788"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.3390\/electronics7120377"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764510.pdf?arnumber=9764510","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T20:41:55Z","timestamp":1655239315000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764510\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764510","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}