{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,4,22]],"date-time":"2025-04-22T05:47:58Z","timestamp":1745300878650,"version":"3.37.3"},"reference-count":38,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000015","name":"U.S. Department of Energy","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000015","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764523","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"7C.3-1-7C.3-7","source":"Crossref","is-referenced-by-count":11,"title":["Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment"],"prefix":"10.1109","author":[{"given":"Y.","family":"Xiong","sequence":"first","affiliation":[{"name":"Vanderbilt University,Nashville,TN"}]},{"given":"A.","family":"Feeley","sequence":"additional","affiliation":[{"name":"Vanderbilt University,Nashville,TN"}]},{"given":"N. J.","family":"Pieper","sequence":"additional","affiliation":[{"name":"Vanderbilt University,Nashville,TN"}]},{"given":"D. R.","family":"Ball","sequence":"additional","affiliation":[{"name":"Vanderbilt University,Nashville,TN"}]},{"given":"B.","family":"Narasimham","sequence":"additional","affiliation":[{"name":"Broadcom Inc,Irvine,CA"}]},{"given":"J.","family":"Brockman","sequence":"additional","affiliation":[{"name":"University of Missouri Research Reactor,Columbia,MO"}]},{"given":"N. A.","family":"Dodds","sequence":"additional","affiliation":[{"name":"Sandia National Laboratories,Albuquerque,NM"}]},{"given":"S. A.","family":"Wender","sequence":"additional","affiliation":[{"name":"Los Alamos National Laboratory,Los Alamos,NM"}]},{"given":"S. -J.","family":"Wen","sequence":"additional","affiliation":[{"name":"Cisco Systems Inc,San Jose,CA"}]},{"given":"R.","family":"Fung","sequence":"additional","affiliation":[{"name":"Cisco Systems Inc,San Jose,CA"}]},{"given":"B. L.","family":"Bhuva","sequence":"additional","affiliation":[{"name":"Vanderbilt University,Nashville,TN"}]}],"member":"263","reference":[{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2010.5706480"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/REDW.2010.5619496"},{"year":"2021","key":"ref32","article-title":"JEDEC JESD89 Standard - Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574554"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405124"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2019.2951996"},{"key":"ref36","first-page":"297","article-title":"Boron compounds as a dominant source of alpha particles in semiconductor devices","author":"baumann","year":"0","journal-title":"Annu Proc Reliab Phys"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2005.853449"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2495130"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936293"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2899056"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2718517"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1086\/164079"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128360"},{"year":"0","key":"ref15","article-title":"Synopsys | EDA Tools, Semiconductor IP and Application Security Solutions"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/DRC46940.2019.9046440"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2895057"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2464706"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2021.3049736"},{"key":"ref28","article-title":"Temperature effects on Threshold Voltage and Mobility for Partially Depleted SO1 MOSFET","volume":"42","author":"goel","year":"2012","journal-title":"Int J Comput Appl"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2495130"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/55.57923"},{"key":"ref3","first-page":"4b11","article-title":"Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices","volume":"2015 may","author":"lee","year":"2015","journal-title":"IEEE Int Reliab Phys Symp Proc"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2535663"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1063\/1.1582376"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2498927"},{"year":"0","key":"ref8","article-title":"James Ziegler - SRIM & TRIM"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2005.860740"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2218128"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405216"},{"article-title":"Computational Characterization and Experimental Validation of the Thermal Neutron Source for Neutron Capture Therapy Research at the University Of Missouri","year":"0","author":"brockman","key":"ref9"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2775234"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2920902"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2016.2620940"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2021.3050719"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2784763"},{"key":"ref26","doi-asserted-by":"crossref","first-page":"2834","DOI":"10.1109\/TNS.2004.835058","article-title":"Temperature dependence of single-event transient current induced by heavy-ion microbeam on p+\/n\/n+ epilayer junctions","volume":"51","author":"guo","year":"2004","journal-title":"IEEE Trans Nucl Sci"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/23.903813"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2022,3,27]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764523.pdf?arnumber=9764523","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,13]],"date-time":"2022-06-13T21:13:58Z","timestamp":1655154838000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764523\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":38,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764523","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}