{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T16:54:32Z","timestamp":1781283272219,"version":"3.54.1"},"reference-count":28,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/irps48227.2022.9764592","type":"proceedings-article","created":{"date-parts":[[2022,5,2]],"date-time":"2022-05-02T20:44:23Z","timestamp":1651524263000},"page":"10B.2-1-10B.2-6","source":"Crossref","is-referenced-by-count":16,"title":["Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition"],"prefix":"10.1109","author":[{"given":"M.","family":"Millesimo","sequence":"first","affiliation":[{"name":"University of Bologna,ARCES-DEI,Cesena,Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"B.","family":"Bakeroot","sequence":"additional","affiliation":[{"name":"Imec and Ghent University,Centre for Microsystems Technology,Ghent,Belgium,9052"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M.","family":"Borga","sequence":"additional","affiliation":[{"name":"Imec,Leuven,Belgium,3001"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"N.","family":"Posthuma","sequence":"additional","affiliation":[{"name":"Imec,Leuven,Belgium,3001"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S.","family":"Decoutere","sequence":"additional","affiliation":[{"name":"Imec,Leuven,Belgium,3001"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"E.","family":"Sangiorgi","sequence":"additional","affiliation":[{"name":"University of Bologna,ARCES-DEI,Cesena,Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.","family":"Fiegna","sequence":"additional","affiliation":[{"name":"University of Bologna,ARCES-DEI,Cesena,Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"A. N.","family":"Tallarico","sequence":"additional","affiliation":[{"name":"University of Bologna,ARCES-DEI,Cesena,Italy"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2828702"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2883573"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2900154"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2867938"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757614"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2972971"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3134928"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2465137"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2553721"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936311"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1063\/1.121918"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046965"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.49.767"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2268900"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2017.09.027"},{"key":"ref5","article-title":"Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology","author":"marcon","year":"2015","journal-title":"Proc SPIE 9363 Gallium Nitride Materials and Devices X 936311"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393658"},{"key":"ref7","article-title":"P-GaN\/AlGaN\/AlN\/GaN enhancement-mode field effect transistor","author":"suh","year":"2008","journal-title":"U S Patent"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.369664"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2230312"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936310"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2938598"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3111144"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757629"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2924675"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(90)90098-X"},{"key":"ref25","year":"2019","journal-title":"Sentaurus-Device U G v P-2019 03"}],"event":{"name":"2022 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2022,3,27]]},"end":{"date-parts":[[2022,3,31]]}},"container-title":["2022 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9764406\/9764408\/09764592.pdf?arnumber=9764592","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,14]],"date-time":"2022-06-14T20:42:02Z","timestamp":1655239322000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9764592\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/irps48227.2022.9764592","relation":{},"subject":[],"published":{"date-parts":[[2022,3]]}}}