{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,11]],"date-time":"2026-02-11T00:23:25Z","timestamp":1770769405377,"version":"3.50.0"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529309","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T13:21:48Z","timestamp":1715865708000},"page":"1-5","source":"Crossref","is-referenced-by-count":0,"title":["The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs"],"prefix":"10.1109","author":[{"given":"D.","family":"Nergui","sequence":"first","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]},{"given":"M.","family":"Hosseinzadeh","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]},{"given":"Y. A.","family":"Mensah","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]},{"given":"H. P.","family":"Lee","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]},{"given":"D. G.","family":"Sam","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]},{"given":"K.","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Vanderbilt University, Nashville,\nTN 37235 USA"}]},{"given":"E. X.","family":"Zhang","sequence":"additional","affiliation":[{"name":"University of Central Florida,Department of Electrical and Computer Engineering,Orlando,FL,USA,32816"}]},{"given":"D. M.","family":"Fleetwood","sequence":"additional","affiliation":[{"name":"Vanderbilt University,Department of Electrical and Computer Engineering,Nashville,TN,USA,37235"}]},{"given":"John D.","family":"Cressler","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/BCTM.2014.6981293"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1117\/12.1518475"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2003.11.003"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.907410"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2004.826587"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2007.909985"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2248167"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/BIPOL.2003.1274966"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2022.3164327"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2210898"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1149\/10904.0151ecst"},{"key":"ref12","volume-title":"Sentaurus Device User Guide","year":"2023"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2653197"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2005.843835"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2012.6468962"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.812927"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2017.2786140"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1974.6498909"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2002.805365"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/tns.2010.2086076"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","location":"Grapevine, TX, USA","start":{"date-parts":[[2024,4,14]]},"end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529309.pdf?arnumber=10529309","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,2,10]],"date-time":"2026-02-10T20:57:23Z","timestamp":1770757043000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529309\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529309","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}