{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,13]],"date-time":"2025-10-13T20:06:48Z","timestamp":1760386008086},"reference-count":15,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529336","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"1-8","source":"Crossref","is-referenced-by-count":8,"title":["Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O<sub>2<\/sub>-Based Ferroelectric NVDRAM"],"prefix":"10.1109","author":[{"given":"Devanarayanan","family":"Ettisserry","sequence":"first","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Angelo","family":"Visconti","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Mauro","family":"Bonanomi","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Riccardo","family":"Pazzocco","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Andrea","family":"Locatelli","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Alessandro","family":"Sebastiani","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Ashonita","family":"Chavan","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Matthew","family":"Hollander","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Giorgio","family":"Servalli","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Alessandro","family":"Calderoni","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]},{"given":"Nirmal","family":"Ramaswamy","sequence":"additional","affiliation":[{"name":"Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA"}]}],"member":"263","reference":[{"key":"ref1","article-title":"Key challenges and directional paths of memory technology for AI\/HPC computing","author":"Kim","year":"2023","journal-title":"short course, IEDM, San Francisco"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45741.2023.10413848"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/5.0148068"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405215"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488738"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724677"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993504"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2022.3187101"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2771390"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202100420"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.1805190"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2004.1419196"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2562007"},{"key":"ref15","first-page":"1","article-title":"Characterization of Fatigue and Its Recovery Behavior in Ferroelectric HfZrO","volume-title":"2021 Symposium on VLSI Technology","author":"Liao"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2024,4,14]]},"location":"Grapevine, TX, USA","end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529336.pdf?arnumber=10529336","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T05:11:31Z","timestamp":1715922691000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529336\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529336","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}