{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,18]],"date-time":"2025-12-18T14:26:19Z","timestamp":1766067979229,"version":"3.37.3"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001809","name":"Natural Science Foundation of China","doi-asserted-by":"publisher","award":["T2293703,62074006,61927901,62125401"],"award-info":[{"award-number":["T2293703,62074006,61927901,62125401"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100017610","name":"Shenzhen Science and Technology Project","doi-asserted-by":"publisher","award":["JCYJ20220818100814033"],"award-info":[{"award-number":["JCYJ20220818100814033"]}],"id":[{"id":"10.13039\/501100017610","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529370","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"7C.1-1-7C.1-6","source":"Crossref","is-referenced-by-count":3,"title":["Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET"],"prefix":"10.1109","author":[{"given":"Sihao","family":"Chen","sequence":"first","affiliation":[{"name":"School of Electrical and Computer Engineering, Peking University,Shenzhen,China,518055"}]},{"given":"Yu","family":"Li","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Peking University,Shenzhen,China,518055"}]},{"given":"Baokang","family":"Peng","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Peking University,Shenzhen,China,518055"}]},{"given":"Zixuan","family":"Sun","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}]},{"given":"Lining","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electrical and Computer Engineering, Peking University,Shenzhen,China,518055"}]},{"given":"Runsheng","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998183"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993490"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614528"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48203.2023.10117903"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3141327"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3315293"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998153"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.23919\/DATE56975.2023.10137162"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3312053"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2825498"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2862918"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2998460"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45625.2022.10019438"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268386"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614576"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2019.8776496"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424362"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2942074"},{"volume-title":"BSIM-CMG 106.0.0 multi-gate MOSFET compact model technical manual","year":"2012","author":"Sriramkumar","key":"ref19"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2801301"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1007\/b117400"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2024,4,14]]},"location":"Grapevine, TX, USA","end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529370.pdf?arnumber=10529370","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T17:23:44Z","timestamp":1715966624000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529370\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529370","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}