{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,10]],"date-time":"2026-01-10T19:31:45Z","timestamp":1768073505473,"version":"3.49.0"},"reference-count":31,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001711","name":"Swiss National Science Foundation","doi-asserted-by":"publisher","award":["192218"],"award-info":[{"award-number":["192218"]}],"id":[{"id":"10.13039\/501100001711","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529387","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"1-6","source":"Crossref","is-referenced-by-count":2,"title":["Exploring the border traps near the SiO<sub>2<\/sub>-SiC interface using conductance measurements"],"prefix":"10.1109","author":[{"given":"P.","family":"Kumar","sequence":"first","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"M.","family":"Krummenacher","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"H. G.","family":"Medeiros","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"S.","family":"Race","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"P.","family":"Natzke","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"I.","family":"Kovacevic-Badst\u00fcbner","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"M.E.","family":"Bathen","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]},{"given":"U.","family":"Grossner","sequence":"additional","affiliation":[{"name":"Eidgen&#x00F6;ssische Technische Hochschule Z&#x00FC;rich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland,8092"}]}],"member":"263","reference":[{"key":"ref1","first-page":"1","article-title":"Performance comparison of 10 kV\u201315 kV high voltage SiC modules and high voltage switch using series connected 1.7 kV LV SiC MOSFET devices","volume-title":"2016 IEEE Energy Conversion Congress and Exposition (ECCE)","author":"Vechalapu","year":"2016"},{"key":"ref2","volume-title":"Switching performance of a 1200 V SiC- Trench-MOSFET in a low-power module","author":"Heer","year":"2016"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC55479.2022.9947113"},{"issue":"16","key":"ref4","doi-asserted-by":"crossref","first-page":"2250","DOI":"10.1063\/1.126311","article-title":"Interface trap profile near the band edges at the 4H- SiC\/SiO2 interface","volume":"76","author":"Saks","year":"2000","journal-title":"Applied Physics Letters"},{"issue":"2","key":"ref5","first-page":"245","article-title":"Review of Silicon Carbide Processing for Power MOSFET","volume-title":"Crystals","volume":"12","author":"Langpoklakpam","year":"2022"},{"issue":"4","key":"ref6","doi-asserted-by":"crossref","first-page":"046601","DOI":"10.7567\/APEX.10.046601","article-title":"Characterization of traps at nitrided SiO2\/SiC interfaces near the conduction band edge by using Hall effect measurements","volume":"10","author":"Hatakeyama","year":"2017","journal-title":"Applied Physics Express"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2005.75"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.4980024"},{"issue":"2","key":"ref9","doi-asserted-by":"crossref","first-page":"269","DOI":"10.1109\/23.277495","article-title":"Border traps in MOS devices","volume":"39","author":"Fleetwood","year":"1992","journal-title":"IEEE Transactions on Nuclear Science"},{"issue":"1","key":"ref10","doi-asserted-by":"crossref","first-page":"39","DOI":"10.1016\/j.microrel.2011.09.002","article-title":"Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities","volume":"52","author":"Grasser","year":"2012","journal-title":"Microelectronics Reliability"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128318"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"2B.2-1","DOI":"10.1109\/IRPS.2018.8353544","article-title":"Reliability studies of SiC vertical power MOSFETs","volume-title":"2018 IEEE International Reliability Physics Symposium (IRPS)","author":"Lichtenwalner","year":"Mar. 2018"},{"issue":"1","key":"ref13","doi-asserted-by":"crossref","first-page":"014502","DOI":"10.1063\/1.4858435","article-title":"Characterization of very fast states in the vicinity of the conduction band edge at the SiO 2 \/SiC interface by low temperature conductance measurements","volume":"115","author":"Yoshioka","year":"2014","journal-title":"Journal of Applied Physics"},{"issue":"21","key":"ref14","doi-asserted-by":"crossref","first-page":"215702","DOI":"10.1063\/5.0086974","article-title":"Detection of near-interface traps in NO annealed 4H- SiC metal oxide semiconductor capacitors combining different electrical characterization methods","volume":"131","author":"Vidarsson","year":"2022","journal-title":"Journal of Applied Physics"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"32","DOI":"10.1016\/j.mssp.2017.11.028","article-title":"SiC MOSFET threshold-stability issues","volume":"78","author":"Lelis","year":"2018","journal-title":"Materials Science in Semiconductor Processing"},{"issue":"8","key":"ref16","doi-asserted-by":"crossref","first-page":"2004","DOI":"10.1109\/TED.2008.926626","article-title":"Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$-$V$ Techniques","volume":"55","author":"Gurfinkel","year":"2008","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"68","DOI":"10.1016\/j.microrel.2017.11.020","article-title":"Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs","volume":"80","author":"Aichinger","year":"2018","journal-title":"Micro-electronics Reliability"},{"issue":"1","key":"ref18","doi-asserted-by":"crossref","first-page":"5","DOI":"10.1038\/s44172-023-00053-8","article-title":"Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors","volume":"2","author":"Feil","year":"2023","journal-title":"Communications Engineering"},{"key":"ref19","article-title":"Exploring the border traps near the valence band in the sio2 -sic system using above bandgap optical excitation","author":"Kumar","journal-title":"under review"},{"issue":"5","key":"ref20","doi-asserted-by":"crossref","first-page":"054501","DOI":"10.1063\/5.0037744","article-title":"A method for characterizing near-interface traps in SiC metal-oxide-semiconductor capacitors from conductance-temperature spectroscopy measurements","volume":"129","author":"Nicholls","year":"2021","journal-title":"Journal of Applied Physics"},{"issue":"44","key":"ref21","doi-asserted-by":"crossref","first-page":"445102","DOI":"10.1088\/1361-6463\/aba38b","article-title":"Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO 2 \/4H- SiC metal-oxide-semiconductor capacitors","volume":"53","author":"Zhai","year":"2020","journal-title":"Journal of Physics D: Applied Physics"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/30\/7\/075011"},{"issue":"1","key":"ref23","doi-asserted-by":"crossref","first-page":"9861","DOI":"10.1038\/s41598-019-46317-2","article-title":"Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k\/In0.53Ga0.47 As on 300-mm Si Substrate","volume":"9","author":"Rahman","year":"2019","journal-title":"Scientific Reports"},{"issue":"3","key":"ref24","doi-asserted-by":"crossref","first-page":"032904","DOI":"10.1116\/1.5060674","article-title":"Determination of border\/bulk traps parameters based on (C - G - V) admittance measurements","volume":"37","author":"Mazurak","year":"2019","journal-title":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1021\/ac60150a721"},{"key":"ref26","volume-title":"Novocontrol Technologies","year":"2024"},{"key":"ref27","first-page":"187","article-title":"Energy-Dependent Impact of Proton Irradiation on 4H- SiC Schottky Diodes","volume-title":"Materials Science Forum","volume":"1092","author":"Kumar","year":"2023"},{"issue":"6","key":"ref28","doi-asserted-by":"crossref","first-page":"3108","DOI":"10.1063\/1.361254","article-title":"Band offsets and electronic structure of SiC\/SiO2 interfaces","volume":"79","author":"Afanasev","year":"1996","journal-title":"Journal of Applied Physics"},{"issue":"18","key":"ref29","doi-asserted-by":"crossref","first-page":"181101","DOI":"10.1063\/1.4948245","article-title":"Tutorial: Defects in semiconductors-Combining experiment and theory","volume":"119","author":"Alkauskas","year":"2016","journal-title":"Journal of Applied Physics"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2018.2866229"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1103\/physrevapplied.19.054025"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","location":"Grapevine, TX, USA","start":{"date-parts":[[2024,4,14]]},"end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529387.pdf?arnumber=10529387","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T04:53:32Z","timestamp":1715921612000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529387\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":31,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529387","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}