{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T20:20:51Z","timestamp":1760473251986},"reference-count":23,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529401","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"1-6","source":"Crossref","is-referenced-by-count":3,"title":["Device Design and Reliability of GAA MBCFET"],"prefix":"10.1109","author":[{"given":"M.","family":"Kang","sequence":"first","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"M.","family":"Chang","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"Y.","family":"Park","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"C.","family":"Noh","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"S. H.","family":"Hong","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"B.","family":"Park","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"Y. H","family":"Park","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"Y.C","family":"Jung","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"W.S.","family":"Lim","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"G.H.","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"Y.","family":"Lee","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"H.","family":"Yang","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"D.","family":"Shin","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"J. G.","family":"Yang","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"K. H.","family":"Cho","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"W. C.","family":"Jeong","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"H.-J","family":"Cho","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"W. H.","family":"Kwon","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"D.W.","family":"Kim","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"K.","family":"Rim","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]},{"given":"J. H.","family":"Song","sequence":"additional","affiliation":[{"name":"Semiconductor R&D Center and Innovation Center, Samsung Electronics,Hwangsung City,Korea,445\u2013701"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894342"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242496"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268472"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573359"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510682"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265095"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2019.2942456"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2003.820777"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2004.1434949"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609453"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2006.1705220"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614629"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998183"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268438"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185353"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48203.2023.10117953"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720573"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/VLSI-TSA.2018.8403821"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268473"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC53440.2021.9631815"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2017.8268430"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993635"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993490"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2024,4,14]]},"location":"Grapevine, TX, USA","end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529401.pdf?arnumber=10529401","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T05:12:05Z","timestamp":1715922725000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529401\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529401","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}