{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T15:54:27Z","timestamp":1778255667257,"version":"3.51.4"},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key R&D Program of China","doi-asserted-by":"publisher","award":["2019YFB2205005"],"award-info":[{"award-number":["2019YFB2205005"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62027818,92164205"],"award-info":[{"award-number":["62027818,92164205"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529451","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"9B.2-1-9B.2-7","source":"Crossref","is-referenced-by-count":3,"title":["Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification"],"prefix":"10.1109","author":[{"given":"Da","family":"Wang","sequence":"first","affiliation":[{"name":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yongkang","family":"Xue","sequence":"additional","affiliation":[{"name":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong","family":"Liu","sequence":"additional","affiliation":[{"name":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pengpeng","family":"Ren","sequence":"additional","affiliation":[{"name":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zixuan","family":"Sun","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zirui","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yueyang","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory of Superlattices and Microstructures,Beijing,China,100083"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhijun","family":"Cheng","sequence":"additional","affiliation":[{"name":"Changxin Memory Technologies, Inc.,HeFei,China,230088"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haiyang","family":"Yang","sequence":"additional","affiliation":[{"name":"Changxin Memory Technologies, Inc.,HeFei,China,230088"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangli","family":"Liu","sequence":"additional","affiliation":[{"name":"Changxin Memory Technologies, Inc.,HeFei,China,230088"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Blacksmith","family":"Wu","sequence":"additional","affiliation":[{"name":"Changxin Memory Technologies, Inc.,HeFei,China,230088"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kanyu","family":"Cao","sequence":"additional","affiliation":[{"name":"Changxin Memory Technologies, Inc.,HeFei,China,230088"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Runsheng","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhigang","family":"Ji","sequence":"additional","affiliation":[{"name":"Shanghai Jiao Tong University,National Key Laboratory of Advanced Micro and Nano Manufacture Technology,Shanghai,China,200240"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits, Peking University,Beijing,China,100871"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830360"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/iedm19574.2021.9720613"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2019.8720598"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/irps48227.2022.9764547"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/isscc42614.2022.9731614"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/relphy.2007.369868"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/led.2023.3266361"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3330834"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45625.2022.10019441"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/t-ed.1969.16744"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2006.346777"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/iedm.2008.4796630"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2021.3091966"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/tdmr.2020.2982660"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/irps48227.2022.9764561"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2023.3294460"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/iedm45741.2023.10413817"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.04.002"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2022.3211492"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","location":"Grapevine, TX, USA","start":{"date-parts":[[2024,4,14]]},"end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529451.pdf?arnumber=10529451","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T05:12:59Z","timestamp":1715922779000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529451\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529451","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}