{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T23:13:41Z","timestamp":1769210021279,"version":"3.49.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2022YFB3604400"],"award-info":[{"award-number":["2022YFB3604400"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004739","name":"Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100004739","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62334012,62074161,62004213,U20A20208,62304252"],"award-info":[{"award-number":["62334012,62074161,62004213,U20A20208,62304252"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529463","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"2C.2-1-2C.2-6","source":"Crossref","is-referenced-by-count":2,"title":["The First Investigation of Switching Lifetime on Parallel-Connected GaN Power Devices"],"prefix":"10.1109","author":[{"given":"Yifei","family":"Huang","sequence":"first","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Qimeng","family":"Jiang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Sen","family":"Huang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Xinyue","family":"Dai","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Xinhua","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]},{"given":"Xinyu","family":"Liu","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/apec.2017.7931131"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ecce47101.2021.9595766"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2017.2657579"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/jproc.2002.1021567"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/apec.2016.7467923"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/gcat52182.2021.9587818"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ecce.2019.8912830"},{"key":"ref8","first-page":"1","article-title":"Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications","volume-title":"PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management","author":"Reusch"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/iecon.2017.8216185"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/jestpe.2016.2557316"},{"key":"ref11","volume-title":"Test Method for Continuous Switching Evaluation of Gallium Nitride Power Conversion Devices"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/tpel.2023.3265960"},{"key":"ref13","volume-title":"GS-065-004-1-L"},{"key":"ref14","first-page":"211","article-title":"Dynamic-Ron in Small and Large C-doped AlGaN\/GaN-on-Si HEMTs","volume-title":"Proc. CS MANTECH","author":"Karboyan","year":"2016"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2016.2593791"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2020.113841"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ted.2017.2706090"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/irps.2018.8353594"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","location":"Grapevine, TX, USA","start":{"date-parts":[[2024,4,14]]},"end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529463.pdf?arnumber=10529463","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T05:12:56Z","timestamp":1715922776000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529463\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529463","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}