{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T15:31:16Z","timestamp":1772206276647,"version":"3.50.1"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,4,14]],"date-time":"2024-04-14T00:00:00Z","timestamp":1713052800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2024,4,14]]},"DOI":"10.1109\/irps48228.2024.10529485","type":"proceedings-article","created":{"date-parts":[[2024,5,16]],"date-time":"2024-05-16T17:21:48Z","timestamp":1715880108000},"page":"2C.4-1-2C.4-6","source":"Crossref","is-referenced-by-count":3,"title":["HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications"],"prefix":"10.1109","author":[{"given":"Y.S.","family":"Lin","sequence":"first","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"Cheng Hsun","family":"Yang","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"C.H.","family":"Wang","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"K.P.","family":"Sou","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"Cheng Hong","family":"Yang","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"M.C.","family":"Shih","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"W.S.","family":"Hung","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"W. H.","family":"Chuang","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,More-than-Moore Technology Quality & Reliability Division,Hsinchu,Taiwan"}]},{"given":"F.M.","family":"Ciou","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan"}]},{"given":"P. C.","family":"Chiu","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan"}]},{"given":"C.C.","family":"Hsu","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan"}]},{"given":"C.F.","family":"Chen","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,High Voltage Product Engineering,Hsinchu,Taiwan"}]},{"given":"D.M.","family":"Kuo","sequence":"additional","affiliation":[{"name":"Taiwan Semiconductor Manufacturing Co., Ltd.,Process Integration Engineering,Hsinchu,Taiwan"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2023.3266365"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/5.0061354"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6641\/abde17"},{"key":"ref4","first-page":"163001","article-title":"The 2018 GaN power electronics roadmap","volume":"51.16","author":"Hiroshi","year":"2018","journal-title":"Journal of Physics D: Applied Physics"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2016.2582685"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2657579"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2931718"},{"key":"ref8","first-page":"2453","article-title":"Evaluation and application of 600 V GaN HEMT in cascode structure","volume":"29.5","author":"Xiucheng","year":"2013","journal-title":"IEEE Transactions on Power Electronics"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.1021567"},{"key":"ref10","first-page":"1151","article-title":"GaN power transistors on Si substrates for switching applications","volume-title":"Proceedings of the IEEE","volume":"98.7","author":"Nariaki","year":"2010"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.822667"},{"key":"ref12","first-page":"2164","article-title":"Effects of gate field plates on the surface state related current collapse in AlGaN\/GaN HEMTs","volume":"29.5","author":"Huolin","year":"2013","journal-title":"IEEE Transactions on Power Electronics"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2281911"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2298255"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2021.114255"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3170293"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2395720"},{"key":"ref18","first-page":"633","article-title":"Investigation of buffer traps in an AlGaN\/GaN\/Si high electron mobility transistor by backgating current deep level transient spectroscopy","volume":"82.4","author":"Michel","year":"2003","journal-title":"Applied physics letters"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2216535"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2706090"}],"event":{"name":"2024 IEEE International Reliability Physics Symposium (IRPS)","location":"Grapevine, TX, USA","start":{"date-parts":[[2024,4,14]]},"end":{"date-parts":[[2024,4,18]]}},"container-title":["2024 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10529283\/10529298\/10529485.pdf?arnumber=10529485","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,5,17]],"date-time":"2024-05-17T17:23:44Z","timestamp":1715966624000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10529485\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,4,14]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/irps48228.2024.10529485","relation":{},"subject":[],"published":{"date-parts":[[2024,4,14]]}}}