{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T04:32:43Z","timestamp":1729657963713,"version":"3.28.0"},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"DOI":"10.1109\/iscas.2002.1010761","type":"proceedings-article","created":{"date-parts":[[2003,6,25]],"date-time":"2003-06-25T16:42:54Z","timestamp":1056559374000},"page":"V-545-V-548","source":"Crossref","is-referenced-by-count":3,"title":["CMOS charge pumps using cross-coupled charge transfer switches with improved voltage pumping gain and low gate-oxide stress for low-voltage memory circuits"],"prefix":"10.1109","volume":"5","author":[{"family":"Kyeong-Sik Min","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Young-Hee Kim","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Jin-Hong Ahn","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Jin-Yong Chung","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T.","family":"Sakurai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"crossref","first-page":"592","DOI":"10.1109\/4.663564","article-title":"MOS charge pumps for low-voltage operation","volume":"33","author":"wu","year":"1998","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.1997.623807"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"1154","DOI":"10.1109\/4.933476","article-title":"A fast pump-down V\/BB generator for sub-1.5-V V DRAMs","volume":"36","author":"min","year":"2001","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/4.661206"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1976.1050739"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"1408","DOI":"10.1109\/4.871316","article-title":"An antifuse EPROM circuitry scheme for field-programmable repair in DRAM","volume":"35","author":"wee","year":"2000","journal-title":"IEEE Journal of Solid-State Circuits"}],"event":{"name":"2002 IEEE International Symposium on Circuits and Systems","acronym":"ISCAS-02","location":"Phoenix-Scottsdale, AZ, USA"},"container-title":["2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/7897\/21767\/01010761.pdf?arnumber=1010761","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,15]],"date-time":"2017-06-15T18:39:52Z","timestamp":1497551992000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1010761\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[null]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/iscas.2002.1010761","relation":{},"subject":[]}}