{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T22:26:56Z","timestamp":1729636016159,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,5]]},"DOI":"10.1109\/iscas.2010.5537156","type":"proceedings-article","created":{"date-parts":[[2010,8,9]],"date-time":"2010-08-09T22:13:20Z","timestamp":1281392000000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["Formation and annihilation of Cu conductive filament in the nonpolar resistive switching Cu\/ZrO<inf>2<\/inf>:Cu\/Pt ReRAM"],"prefix":"10.1109","author":[{"given":"Ming","family":"Liu","sequence":"first","affiliation":[]},{"given":"Qi","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Shibing","family":"Long","sequence":"additional","affiliation":[]},{"given":"Weihua","family":"Guan","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2007.4419062"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.74.035426"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"1636","DOI":"10.1021\/nl900006g","article-title":"Fully room-temperature- fabricated nonvolatile resistive memory for ultrafast and high-density memory","volume":"9","author":"yang","year":"2009","journal-title":"Nano Lett"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.122413"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.2760156"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.2832660"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.894652"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.1845598"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.2715002"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"22907","DOI":"10.1063\/1.2430912","article-title":"Field-induced resistive switching based on space-charge-limited current","volume":"90","author":"xia","year":"2007","journal-title":"Appl Phys Lett"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.2734900"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2004.1419228"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2023"}],"event":{"name":"2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010","start":{"date-parts":[[2010,5,30]]},"location":"Paris, France","end":{"date-parts":[[2010,6,2]]}},"container-title":["Proceedings of 2010 IEEE International Symposium on Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5512009\/5536941\/05537156.pdf?arnumber=5537156","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,19]],"date-time":"2017-06-19T12:20:01Z","timestamp":1497874801000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5537156\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,5]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/iscas.2010.5537156","relation":{},"subject":[],"published":{"date-parts":[[2010,5]]}}}