{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,3]],"date-time":"2024-09-03T19:02:29Z","timestamp":1725390149738},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,5]]},"DOI":"10.1109\/iscas.2013.6572284","type":"proceedings-article","created":{"date-parts":[[2013,8,14]],"date-time":"2013-08-14T11:40:23Z","timestamp":1376480423000},"page":"2083-2086","source":"Crossref","is-referenced-by-count":0,"title":["A monitoring circuit for NBTI degradation at 65nm technology node"],"prefix":"10.1109","author":[{"family":"Yandong He","sequence":"first","affiliation":[]},{"family":"Jie Hong","sequence":"additional","affiliation":[]},{"family":"Ganggang Zhang","sequence":"additional","affiliation":[]},{"family":"Lin Han","sequence":"additional","affiliation":[]},{"family":"Xing Zhang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/DAC.2007.375188"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.852523"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2009.5117765"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2006.10.006"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1145\/1283780.1283821"},{"key":"6","first-page":"797","article-title":"New characterization and modeling approach for nbti degradation from transistor to product level","author":"huard","year":"2007","journal-title":"International Electron Devices Meeting"},{"key":"5","first-page":"346349","article-title":"A critical examination of the mechanics ofdynamic nbti for p-mosfets","author":"alam","year":"2003","journal-title":"Proc Int Electron Device Meeting"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.08.001"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2010.2067810"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2011.2163894"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2012.6271551"}],"event":{"name":"2013 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2013,5,19]]},"location":"Beijing","end":{"date-parts":[[2013,5,23]]}},"container-title":["2013 IEEE International Symposium on Circuits and Systems (ISCAS2013)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6560459\/6571764\/06572284.pdf?arnumber=6572284","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,22]],"date-time":"2017-03-22T16:33:56Z","timestamp":1490200436000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6572284\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,5]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/iscas.2013.6572284","relation":{},"subject":[],"published":{"date-parts":[[2013,5]]}}}