{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T08:08:18Z","timestamp":1725782898635},"reference-count":24,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,5]]},"DOI":"10.1109\/iscas.2015.7168705","type":"proceedings-article","created":{"date-parts":[[2015,7,30]],"date-time":"2015-07-30T21:31:36Z","timestamp":1438291896000},"page":"601-604","source":"Crossref","is-referenced-by-count":3,"title":["Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells"],"prefix":"10.1109","author":[{"given":"Vita Pi-Ho","family":"Hu","sequence":"first","affiliation":[]},{"given":"Ming-Long","family":"Fan","sequence":"additional","affiliation":[]},{"given":"Pin","family":"Su","sequence":"additional","affiliation":[]},{"given":"Ching-Te","family":"Chuang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/TED.2013.2238237"},{"key":"ref11","article-title":"A comparative study of NBTI and PBTI (Charge Trapping) in SiO2\/Hf02 Stacks with FUSI, TiN, Re Gates","author":"zafar","year":"2006","journal-title":"VLSI Tech Sym"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/RELPHY.2008.4558900"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/TCAD.2007.896317"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1109\/TED.2010.2099661"},{"doi-asserted-by":"publisher","key":"ref15","DOI":"10.1109\/IEDM.2013.6724746"},{"key":"ref16","article-title":"BTl and charge trapping in Germanium p-and n-MOSFETs with CVD Hf02 gate dielectric","author":"wu","year":"2005","journal-title":"IEDM Tech Dig"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1109\/TED.2009.2015854"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1016\/j.mee.2009.03.061"},{"doi-asserted-by":"publisher","key":"ref19","DOI":"10.1109\/LED.2012.2218565"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/LED.2007.903405"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/TVLSI.2010.2053226"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/VTSA.2009.5159331"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/LED.2012.2195631"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/LED.2009.2038289"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1088\/0268-1242\/24\/4\/045017"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1109\/IEDM.2007.4419098"},{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/IEDM.2009.5424322"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1109\/IEDM.2008.4796704"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1109\/LED.2013.2295516"},{"doi-asserted-by":"publisher","key":"ref22","DOI":"10.1109\/TED.2012.2228863"},{"year":"0","journal-title":"Sentaurus TCAD G2012–06 Manual","key":"ref21"},{"doi-asserted-by":"publisher","key":"ref24","DOI":"10.1109\/IEDM.2013.6724582"},{"doi-asserted-by":"publisher","key":"ref23","DOI":"10.1145\/2333660.2333682"}],"event":{"name":"2015 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2015,5,24]]},"location":"Lisbon, Portugal","end":{"date-parts":[[2015,5,27]]}},"container-title":["2015 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7152138\/7168553\/07168705.pdf?arnumber=7168705","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T19:39:26Z","timestamp":1490384366000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7168705\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,5]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/iscas.2015.7168705","relation":{},"subject":[],"published":{"date-parts":[[2015,5]]}}}