{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T02:48:43Z","timestamp":1725590923826},"reference-count":12,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,5]]},"DOI":"10.1109\/iscas.2016.7527448","type":"proceedings-article","created":{"date-parts":[[2016,11,1]],"date-time":"2016-11-01T20:59:26Z","timestamp":1478033966000},"page":"1146-1149","source":"Crossref","is-referenced-by-count":3,"title":["Design considerations for reliable OxRAM-based non-volatile flip-flops in 28nm FD-SOI technology"],"prefix":"10.1109","author":[{"given":"N.","family":"Jovanovic","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"O.","family":"Thomas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Vianello","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"Nikolic","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"L.","family":"Naviner","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046995"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2012.6329045"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2218607"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757460"},{"key":"ref11","article-title":"Design insights for reliable energy efficient nonvolatile flip-flop in 28nm FD-SOI","author":"jovanovic","year":"2015","journal-title":"S3S"},{"key":"ref5","article-title":"10x10nm2 Hf\/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation","author":"govoreanu","year":"2012","journal-title":"IEDM Electron Device Meeting"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/4.585288"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2014.6934003"},{"key":"ref7","article-title":"MTJ based non-volatile flip-flop in deep submicrontechnology","author":"jung","year":"2011","journal-title":"ISOCC Tech Dig"},{"key":"ref2","article-title":"A ReRAM-based non-volatile flip-flop with sub-Vt read and CMOS voltage-compatible write","author":"kazi","year":"2013","journal-title":"NEWCAS"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242497"},{"journal-title":"The Evolution of Internet of Things","year":"2013","author":"chase","key":"ref1"}],"event":{"name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2016,5,22]]},"location":"Montr\u00e9al, QC, Canada","end":{"date-parts":[[2016,5,25]]}},"container-title":["2016 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7515073\/7527154\/07527448.pdf?arnumber=7527448","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,10,14]],"date-time":"2020-10-14T16:17:22Z","timestamp":1602692242000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/7527448"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,5]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/iscas.2016.7527448","relation":{},"subject":[],"published":{"date-parts":[[2016,5]]}}}