{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T18:35:42Z","timestamp":1761676542883,"version":"3.28.0"},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,5]]},"DOI":"10.1109\/iscas.2017.8050791","type":"proceedings-article","created":{"date-parts":[[2017,9,28]],"date-time":"2017-09-28T20:33:32Z","timestamp":1506630812000},"page":"1-4","source":"Crossref","is-referenced-by-count":7,"title":["Novel hafnium oxide memristor device: Switching behaviour and size effect"],"prefix":"10.1109","author":[{"given":"Heba","family":"Abunahla","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Baker","family":"Mohammad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Maguy Abi","family":"Jaoude","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mahmoud","family":"Al-Qutayri","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131652"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2015.09.004"},{"journal-title":"Oxygen Partial Pressure over Precious Metals and Its Effect on HC Oxidation Performance (No 2007–01-1060)","year":"2007","author":"tanaka","key":"ref12"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131634"},{"key":"ref14","article-title":"Resistive switching materials and devices for future memory applications","volume":"5","author":"dirk","year":"2012","journal-title":"Tutorial on 43 rd IEEE Semiconductor Interface Specialists Conference (SISC)"},{"journal-title":"Novel secret key generation techniques using memristor","year":"2016","author":"abunahla","key":"ref4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.matchemphys.2016.09.027"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2014.04.084"},{"key":"ref5","first-page":"146","article-title":"HfO2 Bipolar Resistive Memory Device with Robust Endurance using AlCu as Electrode","author":"lee","year":"0","journal-title":"VLSI Technology Systems and Applications 2008 VLSI-TSA 2008 International Symposium on"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2016.7870045"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2011.5873223"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2440392"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"ref9","article-title":"State of the art of metal oxide memristor devices","author":"mohammad","year":"2015","journal-title":"Rev Nanotechnol"}],"event":{"name":"2017 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2017,5,28]]},"location":"Baltimore, MD, USA","end":{"date-parts":[[2017,5,31]]}},"container-title":["2017 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8014728\/8049747\/08050791.pdf?arnumber=8050791","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,10,27]],"date-time":"2017-10-27T21:42:22Z","timestamp":1509140542000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8050791\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,5]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/iscas.2017.8050791","relation":{},"subject":[],"published":{"date-parts":[[2017,5]]}}}