{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T07:03:21Z","timestamp":1769151801168,"version":"3.49.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,5]]},"DOI":"10.1109\/iscas.2018.8351408","type":"proceedings-article","created":{"date-parts":[[2018,5,4]],"date-time":"2018-05-04T18:00:05Z","timestamp":1525456805000},"page":"1-5","source":"Crossref","is-referenced-by-count":27,"title":["Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology"],"prefix":"10.1109","author":[{"given":"E. T.","family":"Breyer","sequence":"first","affiliation":[]},{"given":"H.","family":"Mulaosmanovic","sequence":"additional","affiliation":[]},{"given":"S.","family":"Slesazeck","sequence":"additional","affiliation":[]},{"given":"T.","family":"Mikolajick","sequence":"additional","affiliation":[]},{"given":"T.","family":"Mikolajick","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISMVL.1996.508362"},{"key":"ref3","first-page":"595","article-title":"Flexible Ferroelectric-Capacitor Element for Low Power and Compact Logic-in-Memory Architectures","volume":"20","author":"ishihara","year":"2013","journal-title":"J of Mult -Valued Logic & Soft Computing"},{"key":"ref10","first-page":"44","article-title":"Correlation between the macroscopic ferroelectric material properties of Si: HfO2 and the statistics of 28 nm FeFET memory arrays","volume":"497","author":"m\u00fcller","year":"2016","journal-title":"Ferroelectrics"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1145\/3060403.3060459"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2016.7599662"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/NVMSA.2014.6927206"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268471"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS.2013.6851053"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2014.2329774"},{"key":"ref9","first-page":"233","article-title":"Next-generation ferroelectric memories based on FE-HfO2","author":"m\u00fcller","year":"2015","journal-title":"Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF) International Symposium on Integrated Functionalities (ISIF) and Piezoelectric Force Microscopy Workshop (PFM)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.1.091301"}],"event":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","location":"Florence","start":{"date-parts":[[2018,5,27]]},"end":{"date-parts":[[2018,5,30]]}},"container-title":["2018 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8334884\/8350884\/08351408.pdf?arnumber=8351408","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,21]],"date-time":"2019-10-21T20:53:26Z","timestamp":1571691206000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8351408\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/iscas.2018.8351408","relation":{},"subject":[],"published":{"date-parts":[[2018,5]]}}}