{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T07:13:43Z","timestamp":1730272423193,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,5]]},"DOI":"10.1109\/iscas.2018.8351420","type":"proceedings-article","created":{"date-parts":[[2018,5,4]],"date-time":"2018-05-04T22:00:05Z","timestamp":1525471205000},"page":"1-5","source":"Crossref","is-referenced-by-count":1,"title":["High-Temperature Empirical Modeling for the I-V Characteristics of GaN150-Based HEMT"],"prefix":"10.1109","author":[{"given":"Mostafa","family":"Amer","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ahmad","family":"Hassan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ahmed","family":"Ragab","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Soumaya","family":"Yacout","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yvon","family":"Savaria","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mohamad","family":"Sawan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.3103\/S0735272715100015"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/22.179888"},{"key":"ref12","first-page":"1","article-title":"High temperaturecalibration of a compact model for GaN-on-Si power switches","author":"stoffels","year":"0"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/22.538957"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"1065","DOI":"10.1109\/JPROC.2002.1021571","article-title":"High-temperature electronics-a role for wide bandgap semiconductors?","volume":"90","author":"neudeck","year":"2002","journal-title":"Proceedings of the IEEE"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2017.8010123"},{"journal-title":"A compact transport and charge model for GaN-based high electron mobility transistors for RF applications","year":"2013","author":"radhakrishna","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2015.2468595"},{"journal-title":"Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors","year":"2017","author":"zhang","key":"ref8"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2265320"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2072507"},{"journal-title":"High Temperature Electronics","year":"1996","author":"mccluskey","key":"ref1"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/MMM.2010.937735"}],"event":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2018,5,27]]},"location":"Florence","end":{"date-parts":[[2018,5,30]]}},"container-title":["2018 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8334884\/8350884\/08351420.pdf?arnumber=8351420","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,22]],"date-time":"2019-10-22T00:50:26Z","timestamp":1571705426000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8351420\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/iscas.2018.8351420","relation":{},"subject":[],"published":{"date-parts":[[2018,5]]}}}