{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T16:30:22Z","timestamp":1781886622475,"version":"3.54.5"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,5]]},"DOI":"10.1109\/iscas.2019.8702293","type":"proceedings-article","created":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T17:02:28Z","timestamp":1556730148000},"page":"1-4","source":"Crossref","is-referenced-by-count":15,"title":["Untrimmed CMOS Nano-Ampere Current Reference with Curvature-Compensation Scheme"],"prefix":"10.1109","author":[{"given":"Ahmed Reda","family":"Mohamed","sequence":"first","affiliation":[{"name":"Department of Micro\/Nano Electronics, Shanghai Jiao Tong University (SJTU), Shanghai 200240, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingyi","family":"Chen","sequence":"additional","affiliation":[{"name":"Department of Micro\/Nano Electronics, Shanghai Jiao Tong University (SJTU), Shanghai 200240, China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Guoxing","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Micro\/Nano Electronics, Shanghai Jiao Tong University (SJTU), Shanghai 200240, China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2634779"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2531158"},{"key":"ref10","first-page":"3804","article-title":"A 109 nW, 44 ppm\/C CMOS current reference with low sensitivity to process variations","author":"vita","year":"2007","journal-title":"IEEE International Symposium on Circuits and Systems"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/81.933328"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2010.2056051"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2010.5619819"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/PRIME.2017.7974160"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2017.8050289"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2010.5537432"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2018.2805832"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/PRIME.2017.7974159"}],"event":{"name":"2019 IEEE International Symposium on Circuits and Systems (ISCAS)","location":"Sapporo, Japan","start":{"date-parts":[[2019,5,26]]},"end":{"date-parts":[[2019,5,29]]}},"container-title":["2019 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8682239\/8702066\/08702293.pdf?arnumber=8702293","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,12,22]],"date-time":"2025-12-22T18:40:27Z","timestamp":1766428827000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8702293\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,5]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/iscas.2019.8702293","relation":{},"subject":[],"published":{"date-parts":[[2019,5]]}}}