{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T01:25:11Z","timestamp":1740101111377,"version":"3.37.3"},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,5,28]],"date-time":"2022-05-28T00:00:00Z","timestamp":1653696000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,5,28]],"date-time":"2022-05-28T00:00:00Z","timestamp":1653696000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,5,28]]},"DOI":"10.1109\/iscas48785.2022.9937609","type":"proceedings-article","created":{"date-parts":[[2022,11,11]],"date-time":"2022-11-11T20:38:08Z","timestamp":1668199088000},"page":"311-315","source":"Crossref","is-referenced-by-count":0,"title":["Double Magnetic Tunnel Junction-Based Nonvolatile Logic"],"prefix":"10.1109","author":[{"given":"Abdelrahman G.","family":"Qoutb","sequence":"first","affiliation":[{"name":"University of Rochester,Department of Electrical and Computer Engineering,Rochester,NY,USA,14627"}]},{"given":"Eby G.","family":"Friedman","sequence":"additional","affiliation":[{"name":"University of Rochester,Department of Electrical and Computer Engineering,Rochester,NY,USA,14627"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","first-page":"1449","DOI":"10.1109\/JPROC.2016.2521712","article-title":"Spin-Transfer Torque Memories: Devices, Circuits, and Systems","volume":"104","author":"fong","year":"2016","journal-title":"Proceedings of the IEEE"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-03003-7"},{"key":"ref12","first-page":"2.2.1","article-title":"1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology","author":"lee","year":"2019","journal-title":"Proceedings of the IEEE International Electron Devices Meeting"},{"key":"ref13","first-page":"222","article-title":"13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1MCycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference","author":"chih","year":"2020","journal-title":"Proceedings of the IEEE International Solid-State Circuits Conference"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2877938"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2018.2875491"},{"key":"ref16","first-page":"362","article-title":"H-Bridge Control Circuit","author":"skirda","year":"2010"},{"journal-title":"Predictive Technology Model (PTM)","year":"0","key":"ref17"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1039\/C8NR01365A"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2954131"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2018.2848625"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.4922344"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2791510"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2625749"},{"key":"ref8","first-page":"1","article-title":"Voltage Divider Effect for the Improvement of Variability and Endurance of TaO? Memristor","volume":"6","author":"kim","year":"2016","journal-title":"Scientific Reports"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2016.2574939"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2709812"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2282132"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2731959"}],"event":{"name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2022,5,27]]},"location":"Austin, TX, USA","end":{"date-parts":[[2022,6,1]]}},"container-title":["2022 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9937201\/9937203\/09937609.pdf?arnumber=9937609","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T20:22:27Z","timestamp":1669666947000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9937609\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5,28]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/iscas48785.2022.9937609","relation":{},"subject":[],"published":{"date-parts":[[2022,5,28]]}}}