{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T07:08:01Z","timestamp":1730272081261,"version":"3.28.0"},"reference-count":24,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,5,28]],"date-time":"2022-05-28T00:00:00Z","timestamp":1653696000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,5,28]],"date-time":"2022-05-28T00:00:00Z","timestamp":1653696000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,5,28]]},"DOI":"10.1109\/iscas48785.2022.9937716","type":"proceedings-article","created":{"date-parts":[[2022,11,11]],"date-time":"2022-11-11T15:38:08Z","timestamp":1668181088000},"page":"3532-3536","source":"Crossref","is-referenced-by-count":2,"title":["STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability"],"prefix":"10.1109","author":[{"given":"Hassen","family":"Aziza","sequence":"first","affiliation":[{"name":"Aix-Marseille Univ, Univ Toulon, CNRS, IM2NP,Marseille,France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jeremy","family":"Postel-Pellerin","sequence":"additional","affiliation":[{"name":"Aix-Marseille Univ, Univ Toulon, CNRS, IM2NP,Marseille,France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hussein","family":"Bazzi","sequence":"additional","affiliation":[{"name":"Aix-Marseille Univ, Univ Toulon, CNRS, IM2NP,Marseille,France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mathieu","family":"Moreau","sequence":"additional","affiliation":[{"name":"Aix-Marseille Univ, Univ Toulon, CNRS, IM2NP,Marseille,France"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Adnan","family":"Harb","sequence":"additional","affiliation":[{"name":"Lebanese International University,Beirut,Lebanon"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2015.2394434"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IDT.2011.6123106"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ITC44170.2019.9000134"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1088\/0268-1242\/31\/6\/063002","article-title":"Resistive switching memories based on metal oxides: mechanisms, reliability and scaling","volume":"31","author":"ielmini","year":"2016","journal-title":"Semiconductor Science and Technology"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838348"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS.2011.6137089"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.3011647"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131572"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2013.6582090"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.06.116"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TSM.2015.2439275"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2020.2976735"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS44328.2019.8961278"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2010.5667684"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2017.7962594"},{"key":"ref7","first-page":"186","article-title":"Stochastic learning in oxide binary synaptic device for neuromorphic computing","volume":"7","author":"yu et al","year":"2013","journal-title":"Frontiers Neurosci"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2017.2703985"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2016.2546199"},{"key":"ref9","first-page":"217","article-title":"Select transistor modulated cell array structure test for EEPROM reliability","author":"pio et al","year":"2000","journal-title":"Proc International Conference on Microelectronic Test Structures"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2805470"},{"key":"ref22","article-title":"Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability","author":"bazzi et al","year":"2021","journal-title":"J Electron Test"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070830"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/DTIS.2017.7930176"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2954753"}],"event":{"name":"2022 IEEE International Symposium on Circuits and Systems (ISCAS)","start":{"date-parts":[[2022,5,27]]},"location":"Austin, TX, USA","end":{"date-parts":[[2022,6,1]]}},"container-title":["2022 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9937201\/9937203\/09937716.pdf?arnumber=9937716","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,11,28]],"date-time":"2022-11-28T15:22:45Z","timestamp":1669648965000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9937716\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,5,28]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/iscas48785.2022.9937716","relation":{},"subject":[],"published":{"date-parts":[[2022,5,28]]}}}