{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T06:51:26Z","timestamp":1781851886858,"version":"3.54.5"},"reference-count":8,"publisher":"IEEE","license":[{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,5,24]]},"DOI":"10.1109\/iscas66217.2026.11562088","type":"proceedings-article","created":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T20:06:41Z","timestamp":1781813201000},"page":"4277-4281","source":"Crossref","is-referenced-by-count":0,"title":["Three-Level GaN HEMT Gate Driver with Negative V\n                    <sub>GS<\/sub>\n                    Pulse and Integrated Overcurrent Protection"],"prefix":"10.1109","author":[{"given":"Nick","family":"Van Houtven","sequence":"first","affiliation":[{"name":"MinDCet,Leuven,Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jef","family":"Thon\u00e9","sequence":"additional","affiliation":[{"name":"MinDCet,Leuven,Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mike","family":"Wens","sequence":"additional","affiliation":[{"name":"MinDCet,Leuven,Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Valentijn","family":"De Smedt","sequence":"additional","affiliation":[{"name":"KU Leuven,ADVISE,Department of Electrical Engineering,Belgium"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2017.8096401"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TIE.2017.2719599"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.30420\/566262251"},{"key":"ref4","article-title":"Texas Instruments does gan have a body diode? - understanding the third quadrant operation of gan"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2018.8310345"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/APEC43599.2022.9773446"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD57135.2023.10147669"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/APEC48143.2025.10977438"}],"event":{"name":"2026 IEEE International Symposium on Circuits and Systems (ISCAS)","location":"Shanghai, China","start":{"date-parts":[[2026,5,24]]},"end":{"date-parts":[[2026,5,28]]}},"container-title":["2026 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11561899\/11561804\/11562088.pdf?arnumber=11562088","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T05:57:55Z","timestamp":1781848675000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11562088\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5,24]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/iscas66217.2026.11562088","relation":{},"subject":[],"published":{"date-parts":[[2026,5,24]]}}}