{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T06:51:33Z","timestamp":1781851893862,"version":"3.54.5"},"reference-count":15,"publisher":"IEEE","license":[{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100011249","name":"Northwest Institute of Nuclear Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100011249","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100017413","name":"Innovation Fund","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100017413","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,5,24]]},"DOI":"10.1109\/iscas66217.2026.11562224","type":"proceedings-article","created":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T20:06:41Z","timestamp":1781813201000},"page":"2415-2419","source":"Crossref","is-referenced-by-count":0,"title":["A Co-Design Architecture for Synergistic Mitigation of SEL and SEU in 16 nm FinFET-Based Radiation-Hardened SRAM"],"prefix":"10.1109","author":[{"given":"Xuezhi","family":"Zheng","sequence":"first","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Minchi","family":"Hu","sequence":"additional","affiliation":[{"name":"Fudan University,College of Integrated Circuits and Micro-Nano Electronics,Shanghai,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mingzhang","family":"Duan","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zongxuan","family":"Xie","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Electronic and Communication Engineering,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongjie","family":"Zeng","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xiang","family":"Wang","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zejun","family":"Li","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chang","family":"Cai","sequence":"additional","affiliation":[{"name":"Guangzhou University,School of Physics and Materials Science,Guangzhou,China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/devic50843.2021.9455796"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.3390\/app15136988"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1007\/s10836-021-05941-5"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/access.2020.3035974"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ElConRus51938.2021.9396651"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2020.113901"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/vdat53777.2021.9601130"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1007\/s10836-021-05941-5"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/tvlsi.2018.2879341"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.23919\/eosesd.2017.8073415"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/tcsii.2020.3042520"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2012.6292120"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2009.2032090"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2872507"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/tcsi.2021.3085516"}],"event":{"name":"2026 IEEE International Symposium on Circuits and Systems (ISCAS)","location":"Shanghai, China","start":{"date-parts":[[2026,5,24]]},"end":{"date-parts":[[2026,5,28]]}},"container-title":["2026 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11561899\/11561804\/11562224.pdf?arnumber=11562224","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T05:59:26Z","timestamp":1781848766000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11562224\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5,24]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/iscas66217.2026.11562224","relation":{},"subject":[],"published":{"date-parts":[[2026,5,24]]}}}