{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T06:50:39Z","timestamp":1781851839600,"version":"3.54.5"},"reference-count":14,"publisher":"IEEE","license":[{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,5,24]],"date-time":"2026-05-24T00:00:00Z","timestamp":1779580800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2026,5,24]]},"DOI":"10.1109\/iscas66217.2026.11562455","type":"proceedings-article","created":{"date-parts":[[2026,6,18]],"date-time":"2026-06-18T20:06:41Z","timestamp":1781813201000},"page":"3315-3319","source":"Crossref","is-referenced-by-count":0,"title":["An All-MOS 1-nA Current Reference Insensitive to Process and Voltage Variations"],"prefix":"10.1109","author":[{"given":"Kexin","family":"Shan","sequence":"first","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jiaqing","family":"Rui","sequence":"additional","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuting","family":"Wan","sequence":"additional","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenxian","family":"Gu","sequence":"additional","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xing","family":"Wu","sequence":"additional","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"C.-J. Richard","family":"Shi","sequence":"additional","affiliation":[{"name":"University of Washington,Department of Electrical and Computer Engineering,Seattle,USA,WA98195"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Liangjian","family":"Lyu","sequence":"additional","affiliation":[{"name":"East China Normal University,In Situ Devices Center, School of Integrated Circuits,Shanghai,China,200241"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ESSERC62670.2024.10719531"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2927240"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2020.3009838"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/tcsii.2022.3183146"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3225574"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2010.5619819"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2017.8050289"},{"issue":"8","key":"ref8","first-page":"723","article-title":"A 0.67-\u03bcW 177-ppm\/\u00b0C All-MOS Current Reference Circuit in a 0.18-\u03bcm CMOS Technology","volume":"63","author":"Chouhan","year":"2016","journal-title":"IEEE Transactions on Circuits and Systems II: Express Briefs"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2019.8702293"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2023.3240209"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2017.8094515"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2004.842059"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-16136-5"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2022.3158358"}],"event":{"name":"2026 IEEE International Symposium on Circuits and Systems (ISCAS)","location":"Shanghai, China","start":{"date-parts":[[2026,5,24]]},"end":{"date-parts":[[2026,5,28]]}},"container-title":["2026 IEEE International Symposium on Circuits and Systems (ISCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/11561899\/11561804\/11562455.pdf?arnumber=11562455","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T05:52:15Z","timestamp":1781848335000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11562455\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5,24]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/iscas66217.2026.11562455","relation":{},"subject":[],"published":{"date-parts":[[2026,5,24]]}}}