{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,22]],"date-time":"2024-10-22T23:48:01Z","timestamp":1729640881201,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2012,5]]},"DOI":"10.1109\/isie.2012.6237126","type":"proceedings-article","created":{"date-parts":[[2012,7,20]],"date-time":"2012-07-20T20:58:20Z","timestamp":1342817900000},"page":"437-441","source":"Crossref","is-referenced-by-count":0,"title":["Parameters evaluation for SiC-JFET modeling considering non-uniformity by fabrication"],"prefix":"10.1109","author":[{"family":"Chaofeng Cai","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Yilong Qu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Qing Guo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Wang Tao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Kuang Sheng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/16.930664"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2010.2090843"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2011.2155018"},{"key":"3","first-page":"361","article-title":"Saturation current improvement in 1200V normally-off SiC VJFETs using non-uniform channel doping","author":"ritenour","year":"2010","journal-title":"Intl Symp Power Semiconductor Devices and ICs (ISPSD)"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2008.4538948"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/IPEC.2010.5543711"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2011.2154296"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2008.4592724"},{"key":"6","first-page":"1","article-title":"Balancing circuit for a 5- kV\/50-ns pulsed-power switch based on SiC-JFET super cascode","author":"aggeler","year":"2011","journal-title":"Plasma Science IEEE Transactions on"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1984.21783"},{"key":"4","doi-asserted-by":"crossref","first-page":"1880","DOI":"10.1109\/TED.2008.926678","article-title":"1.88-m? cm2 1650V normally on 4H-SiC TI-VJFET","volume":"55","author":"yuzhu li","year":"2008","journal-title":"Electron Devices IEEE Transactions on"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1109\/JRPROC.1952.273964"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/ICPE.2011.5944668"}],"event":{"name":"2012 IEEE 21st International Symposium on Industrial Electronics (ISIE)","start":{"date-parts":[[2012,5,28]]},"location":"Hangzhou, China","end":{"date-parts":[[2012,5,31]]}},"container-title":["2012 IEEE International Symposium on Industrial Electronics"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/6230783\/6237048\/06237126.pdf?arnumber=6237126","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,20]],"date-time":"2017-06-20T17:45:31Z","timestamp":1497980731000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6237126\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,5]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/isie.2012.6237126","relation":{},"subject":[],"published":{"date-parts":[[2012,5]]}}}