{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T07:44:50Z","timestamp":1730274290946,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,6,1]],"date-time":"2020-06-01T00:00:00Z","timestamp":1590969600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,6,1]],"date-time":"2020-06-01T00:00:00Z","timestamp":1590969600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,6,1]],"date-time":"2020-06-01T00:00:00Z","timestamp":1590969600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,6]]},"DOI":"10.1109\/isie45063.2020.9152226","type":"proceedings-article","created":{"date-parts":[[2020,7,31]],"date-time":"2020-07-31T00:49:41Z","timestamp":1596156581000},"page":"630-635","source":"Crossref","is-referenced-by-count":1,"title":["Active Voltage Controlled Switching of the Power GaN HEMT"],"prefix":"10.1109","author":[{"given":"Patrick","family":"Palmer","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiacheng","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Edward","family":"Shelton","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TIA.2014.2347578"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2261072"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2013.2274331"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2004.830078"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2018.8557531"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2015.2439712"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.23919\/EPE17ECCEEurope.2017.8099377"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2017.8096858"},{"key":"ref2","first-page":"5.3.1","article-title":"Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures","volume":"february","author":"cornigli","year":"2016","journal-title":"Tech Dig - Int Electron Devices Meet IEDM"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2017.8216135"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISIE.2019.8781360"}],"event":{"name":"2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)","start":{"date-parts":[[2020,6,17]]},"location":"Delft, Netherlands","end":{"date-parts":[[2020,6,19]]}},"container-title":["2020 IEEE 29th International Symposium on Industrial Electronics (ISIE)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9145944\/9152187\/09152226.pdf?arnumber=9152226","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,6,28]],"date-time":"2022-06-28T21:50:55Z","timestamp":1656453055000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9152226\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,6]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/isie45063.2020.9152226","relation":{},"subject":[],"published":{"date-parts":[[2020,6]]}}}