{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T18:24:58Z","timestamp":1775067898347,"version":"3.50.1"},"reference-count":9,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,7]]},"DOI":"10.1109\/islped.2017.8009154","type":"proceedings-article","created":{"date-parts":[[2017,8,14]],"date-time":"2017-08-14T16:31:31Z","timestamp":1502728291000},"page":"1-6","source":"Crossref","is-referenced-by-count":4,"title":["Charge recycled low power SRAM with integrated write and read assist, for wearable electronics, designed in 7nm FinFET"],"prefix":"10.1109","author":[{"given":"Vivek","family":"Nautiyal","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gaurav","family":"Singla","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Satinderjit","family":"Singh","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fakhruddin ali","family":"Bohra","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jitendra","family":"Dasani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lalit","family":"Gupta","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sagar","family":"Dwivedi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"170","article-title":"A 16 nm 128 Mb SRAM in High-metal-gate FinFET technology with write-assist circuitry for low-VMIN applications","author":"yen-huei","year":"2015","journal-title":"IEEE Journal of Solid-state 1 Circuits"},{"key":"ref3","article-title":"A 20nm 112Mb SRAM in High-K metal-gate with assist circuitry for low-leakage and low-V Min applications","author":"jonathan","year":"2013","journal-title":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers IEEE"},{"key":"ref6","article-title":"Wordline & bitline pulsing schemes for improving SRAM cell stability in low-Vcc 65nm CMOS designs","author":"muhammad","year":"0","journal-title":"2006 Symposium on VLSI Circuits 2006 Digest of Technical Papers 2006"},{"key":"ref5","article-title":"Energy-efficient system design for IoT devices","author":"hrishikesh","year":"2016","journal-title":"2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC) ASP-DAC"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2012.2231015"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2006.1705289"},{"key":"ref2","first-page":"150","article-title":"A 4.6 GHz 162 Mb SRAM design in 22 nm tri-gate CMOS technology with integrated read and write assist circuitry","author":"eric","year":"2013","journal-title":"IEEE Journal of Solid-state 1 Circuits"},{"key":"ref9","first-page":"3039","article-title":"Single-ended subthreshold SRAM with asymmetrical write\/read-assist","author":"ming-hsien","year":"2010","journal-title":"IEEE Transactions on Circuits and Systems I \\\\\\\\\\\\\\\\ Regular Papers 57 12"},{"key":"ref1","article-title":"Low V MIN 20nm embedded SRAM with multi-voltage wordline control based read and write assist techniques","author":"mudit","year":"2014","journal-title":"2014 Symposium on VLSI Circuits Digest of Technical Papers"}],"event":{"name":"2017 IEEE\/ACM International Symposium on Low Power Electronics and Design (ISLPED)","location":"Taipei, Taiwan","start":{"date-parts":[[2017,7,24]]},"end":{"date-parts":[[2017,7,26]]}},"container-title":["2017 IEEE\/ACM International Symposium on Low Power Electronics and Design (ISLPED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8002794\/8009138\/08009154.pdf?arnumber=8009154","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,12,13]],"date-time":"2017-12-13T15:02:26Z","timestamp":1513177346000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8009154\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,7]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/islped.2017.8009154","relation":{},"subject":[],"published":{"date-parts":[[2017,7]]}}}