{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,18]],"date-time":"2025-11-18T09:24:21Z","timestamp":1763457861883},"reference-count":25,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,7,1]],"date-time":"2019-07-01T00:00:00Z","timestamp":1561939200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,7,1]],"date-time":"2019-07-01T00:00:00Z","timestamp":1561939200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,7,1]],"date-time":"2019-07-01T00:00:00Z","timestamp":1561939200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,7]]},"DOI":"10.1109\/islped.2019.8824874","type":"proceedings-article","created":{"date-parts":[[2019,9,5]],"date-time":"2019-09-05T23:11:46Z","timestamp":1567725106000},"page":"1-6","source":"Crossref","is-referenced-by-count":4,"title":["3DTUBE: A Design Framework for High-Variation Carbon Nanotube-based Transistor Technology"],"prefix":"10.1109","author":[{"given":"Aporva","family":"Amarnath","sequence":"first","affiliation":[]},{"given":"Javad","family":"Bagherzadeh","sequence":"additional","affiliation":[]},{"given":"Jielun","family":"Tan","sequence":"additional","affiliation":[]},{"given":"Ronald G.","family":"Dreslinski","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1978.1051122"},{"key":"ref11","article-title":"Overcoming CNT variations through co-optimized technology and circuit design","author":"zhang","year":"2011","journal-title":"IEDM"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1145\/3175500"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2586961"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/DFT.2011.31"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2007.907047"},{"key":"ref16","article-title":"Path-based statistical timing analysis considering inter-and intra-die correlations","author":"agarwal","year":"2002","journal-title":"TAU"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2010.205"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2017.7927006"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2015.7372585"},{"journal-title":"SkyWater Begins Work With MIT on Next-Generation Technology Development for DARPA Electronics Resurgence Initiative","year":"2018","key":"ref4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ISLPED.2017.8009156"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.11.011"},{"journal-title":"The Innovator’s Dilemma When New Technologies Cause Great Firms to Fail","year":"2013","author":"christensen","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1021\/nn203516z"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/1629911.1629933"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894422"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2011.2121010"},{"journal-title":"International Technology Roadmap for Semiconductors","year":"2013","key":"ref1"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1021\/ar010152e"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.885049"},{"journal-title":"Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model","year":"2015","author":"lee","key":"ref21"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1145\/2600073"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2008.2006903"},{"journal-title":"Variation-Aware NDK","year":"2015","author":"hills","key":"ref25"}],"event":{"name":"2019 IEEE\/ACM International Symposium on Low Power Electronics and Design (ISLPED)","start":{"date-parts":[[2019,7,29]]},"location":"Lausanne, Switzerland","end":{"date-parts":[[2019,7,31]]}},"container-title":["2019 IEEE\/ACM International Symposium on Low Power Electronics and Design (ISLPED)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8819888\/8824790\/08824874.pdf?arnumber=8824874","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:15:27Z","timestamp":1657854927000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8824874\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,7]]},"references-count":25,"URL":"https:\/\/doi.org\/10.1109\/islped.2019.8824874","relation":{},"subject":[],"published":{"date-parts":[[2019,7]]}}}