{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,6]],"date-time":"2025-07-06T07:41:08Z","timestamp":1751787668603,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE Comput. Soc","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"DOI":"10.1109\/isqed.2004.1283680","type":"proceedings-article","created":{"date-parts":[[2004,5,6]],"date-time":"2004-05-06T16:18:03Z","timestamp":1083860283000},"page":"238-243","source":"Crossref","is-referenced-by-count":21,"title":["Circuit level reliability analysis of Cu interconnects"],"prefix":"10.1109","author":[{"given":"S.M.","family":"Alam","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"family":"Gan Chee Lip","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.V.","family":"Thompson","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.E.","family":"Troxel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"journal-title":"CuEmSim Simulation of Electromigration and Electromigration-induced Damage in Cu-based Interconnects","year":"2003","author":"choi","key":"17"},{"key":"18","doi-asserted-by":"publisher","DOI":"10.1109\/MSE.2003.1205272"},{"key":"15","first-page":"2000","author":"hau-riege","year":"0","journal-title":"New methodologies for interconnect reliability assessments of integrated circuits"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1063\/1.369714"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1989.36349"},{"key":"14","doi-asserted-by":"publisher","DOI":"10.1063\/1.366464"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197740"},{"key":"12","doi-asserted-by":"crossref","first-page":"3236","DOI":"10.1063\/1.1418034","article-title":"Electromigration critical length effect in Cu\/oxide dual-damascene interconnects","volume":"79","author":"lee","year":"2001","journal-title":"Applied Physics Letter"},{"key":"3","doi-asserted-by":"publisher","DOI":"10.1016\/0026-2692(92)90041-X"},{"journal-title":"International Technology Roadmap for Semiconductors 2002 Update","year":"0","key":"2"},{"key":"1","doi-asserted-by":"crossref","first-page":"465","DOI":"10.1147\/rd.394.0465","volume":"39","author":"hu","year":"1995","journal-title":"IBM Journal of Research & Develop"},{"key":"10","article-title":"The reliability of wide-to-narrow Cu interconnects","author":"gan","year":"0","journal-title":"Journal of Applied Physics"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2002.1025630"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1023\/A:1024190918668"},{"key":"5","article-title":"ERNI: A tool for technology-generic circuit-level reliability projections","author":"cherry","year":"1999","journal-title":"Interconnect Focus Center Annual Review"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/43.644613"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1585119"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1428410"}],"event":{"name":"5th International Symposium on Quality Electronic Design","acronym":"ISQED-04","location":"San Jose, CA, USA"},"container-title":["SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/9029\/28654\/01283680.pdf?arnumber=1283680","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,16]],"date-time":"2017-06-16T02:52:37Z","timestamp":1497581557000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1283680\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[null]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/isqed.2004.1283680","relation":{},"subject":[]}}