{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T00:47:44Z","timestamp":1729644464492,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2008,3]]},"DOI":"10.1109\/isqed.2008.4479850","type":"proceedings-article","created":{"date-parts":[[2008,4,2]],"date-time":"2008-04-02T14:55:10Z","timestamp":1207148110000},"page":"855-860","source":"Crossref","is-referenced-by-count":12,"title":["Compact FinFET Memory Circuits with P-Type Data Access Transistors for Low Leakage and Robust Operation"],"prefix":"10.1109","author":[{"given":"Sherif A.","family":"Tawfik","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Volkan","family":"Kursun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"crossref","first-page":"207","DOI":"10.1109\/DRC.2004.1367867","article-title":"4-terminal finfets with high threshold voltage controllability","volume":"1","author":"liu","year":"2004","journal-title":"Proc IEEE Device Research Conf"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.896898"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2007.378628"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/MCD.2004.1263404"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2004.1346590"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2007.378160"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175824"},{"year":"0","key":"9"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2007.377983"},{"key":"11","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2007.4511025"}],"event":{"name":"2008 9th International Symposium of Quality of Electronic Design (ISQED)","start":{"date-parts":[[2008,3,17]]},"location":"San Jose, CA, USA","end":{"date-parts":[[2008,3,19]]}},"container-title":["9th International Symposium on Quality Electronic Design (isqed 2008)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/4479672\/4479673\/04479850.pdf?arnumber=4479850","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,18]],"date-time":"2017-06-18T02:15:48Z","timestamp":1497752148000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/4479850\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,3]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/isqed.2008.4479850","relation":{},"subject":[],"published":{"date-parts":[[2008,3]]}}}